Datasheet

STM32F051x Electrical characteristics
Doc ID 022265 Rev 3 65/105
Table 43. Flash memory characteristics
Symbol Parameter Conditions Min Typ Max
(1)
1. Guaranteed by design, not tested in production.
Unit
t
prog
16-bit programming time T
A
= –40 to +105 °C 40 53.5 60 µs
t
ERASE
Page (1 KB) erase time T
A
= –40 to +105 °C 20 - 40 ms
t
ME
Mass erase time T
A
= –40 to +105 °C 20 - 40 ms
I
DD
Supply current
Write mode - - 10 mA
Erase mode - - 12 mA
V
prog
Programming voltage 2 - 3.6 V
Table 44. Flash memory endurance and data retention
Symbol Parameter Conditions
Value
Unit
Min
(1)
1. Data based on characterization results, not tested in production.
N
END
Endurance
T
A
= –40 to +85 °C (6 suffix versions)
T
A
= –40 to +105 °C (7 suffix versions)
10
kcycles
t
RET
Data retention
1 kcycle
(2)
at T
A
= 85 °C
2. Cycling performed over the whole temperature range.
30
Ye a r s1 kcycle
(2)
at T
A
= 105 °C 10
10 kcycles
(2)
at T
A
= 55 °C 20