Datasheet

Electrical characteristics STGFW30V60F, STGW30V60F, STGWT30V60F
8/19 DocID025005 Rev 4
Figure 14. Capacitance variations Figure 15. Gate charge vs. gate-emitter voltage
Figure 16. Switching losses vs. collector
current
Figure 17. Switching losses vs. gate resistance
Figure 18. Switching losses vs. junction
temperature
Figure 19. Switching losses vs. collector
emitter voltage
C(pF)
10
0.1
VCE(V)
1000
1
10
100
10000
Cies
Coes
Cres
AM17421v1
VGE(V)
0
0
Qg(nC)
50
100
2
150
175
4
6
8
10
12
14
16
25
125
75
V
CC = 480 V
I
C = 30 A
AM17422v1
E(μJ)
0
0
IC(A)
400
10
20
200
600
30 40
V
CC=400V,
V
GE=15V
Rg=10Ω,
Tj=175°C
800
1000
1200
1400
Eon
Eoff
50 60
1600
1800
2000
AM17423v1
E(μJ)
0
Rg(Ω)
400
10
20
200
600
30 40
V
CC=400V,
V
GE=15V
I
C=30A,
Tj=175°C
800
1000
1200
Eon
Eoff
AM17424v1
E(μJ)
25
T
J(°C)
200
50
75
100
300
100 125
V
CC=400V,
V
GE=15V
I
C=30A,
Rg=10Ω
400
500
600
Eon
Eoff
150
0
700
800
AM17425v1
E(μJ)
150
V
CE(V)
500
200
250
100
900
300 350
V
GE=15V,
Tj=175°C
I
C=30A,
Rg=10Ω
Eon
Eoff
300
700
1100
400 450
AM17426v1