Datasheet

Electrical characteristics STGFW30V60F, STGW30V60F, STGWT30V60F
4/19 DocID025005 Rev 4
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0)
I
C
= 2 mA 600 V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
= 15 V, I
C
= 30 A 1.85 2.3
V
V
GE
= 15 V, I
C
= 30 A
T
J
= 125 °C
2.15
V
GE
= 15 V, I
C
= 30 A
T
J
= 175 °C
2.35
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 1 mA 5 6 7 V
I
CES
Collector cut-off current
(V
GE
= 0)
V
CE
= 600 V 25 µA
I
GES
Gate-emitter leakage
current (V
CE
= 0)
V
GE
= ± 20 V 250 nA
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-3750- pF
C
oes
Output capacitance - 120 - pF
C
res
Reverse transfer
capacitance
-77-pF
Q
g
Total gate charge
V
CC
= 480 V, I
C
= 30 A,
V
GE
= 15 V, see Figure 26
-163-nC
Q
ge
Gate-emitter charge - 28 - nC
Q
gc
Gate-collector charge - 72 - nC