Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsBJTs & IGBTsIGBT

This is information on a product in full production.

April 2014 DocID025005 Rev 4 1/19

STGFW30V60F,

STGW30V60F, STGWT30V60F

Trench gate field-stop IGBT, V series

600 V, 30 A very high speed

Datasheet

production data

Figure 1. Internal schematic diagram

Features

• Maximum junction temperature: T

= 175 °C

• Tail-less switching off

• V

CE(sat)

= 1.85 V (typ.) @ I

= 30 A

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

Applications

• Photovoltaic inverters

• Uninterruptible power supply

• Welding

• Power factor correction

• Very high frequency converters

Description

This device is an IGBT developed using an

advanced proprietary trench gate field-stop

structure. The device is part of the V series of

IGBTs, which represent an optimum compromise

between conduction and switching losses to

maximize the efficiency of very high frequency

converters. Furthermore, a positive V

CE(sat)

temperature coefficient and very tight parameter

distribution result in safer paralleling operation.

C (2, TAB)

G (1)

E (3)

111

TO-247

TO-3P

TO-3PF

Tab

Table 1. Device summary

Order codes Marking Package Packaging

STGFW30V60F GFW30V60F TO-3PF Tube

STGW30V60F GW30V60F TO-247 Tube

STGWT30V60F GWT30V60F TO-3P Tube

www.st.com

Summary of content (19 pages)

PAGE 1
STGFW30V60F, STGW30V60F, STGWT30V60F Trench gate field-stop IGBT, V series 600 V, 30 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 30 A 3 TO-3PF 2 • Tight parameters distribution 1 Tab • Safe paralleling • Low thermal resistance 2 3 3 2 1 1 TO-3P TO-247 Applications • Photovoltaic inverters Figure 1.
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Contents STGFW30V60F, STGW30V60F, STGWT30V60F Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 5 2/19 . . . . . . . . . . . . . . . . .
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STGFW30V60F, STGW30V60F, STGWT30V60F 1 Electrical ratings Electrical ratings Table 2.
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Electrical characteristics 2 STGFW30V60F, STGW30V60F, STGWT30V60F Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) Unit V 1.
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STGFW30V60F, STGW30V60F, STGWT30V60F Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Test conditions Min. Typ. Max.
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Electrical characteristics 2.1 STGFW30V60F, STGW30V60F, STGWT30V60F Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature for TO-247 and TO-3P AM17409v1 Ptot (W) Figure 3. Collector current vs. case temperature for TO-247 and TO-3P AM17410v1 IC (A) VGE =15 V, TJ = 175 °C 60 250 50 200 40 150 30 100 20 50 0 0 10 25 50 0 0 75 100 125 150 175 TC(°C) Figure 4. Power dissipation vs.
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STGFW30V60F, STGW30V60F, STGWT30V60F Figure 8. VCE(sat) vs. junction temperature AM17413v1 VCE(sat) (V) 3.2 VGE=15V IC=60A 3.0 Figure 9. VCE(sat) vs. collector current VCE(sat) (V) 3.2 3.0 AM17414v1 Tj=175°C VGE=15V 2.8 2.6 2.8 2.6 2.2 2.0 IC=15A 1.8 1.6 0 50 100 150 Tj=25°C 2.4 2.2 IC=30A 2.4 1.4 1.2 -50 Electrical characteristics TC(°C) Figure 10. Safe operating area for TO-3PF 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0 Tj=-40°C 10 30 20 40 50 60 IC(A) Figure 11.
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Electrical characteristics STGFW30V60F, STGW30V60F, STGWT30V60F Figure 14. Capacitance variations Figure 15. Gate charge vs. gate-emitter voltage AM17421v1 C(pF) 10000 AM17422v1 VGE(V) VCC = 480 V IC = 30 A 16 Cies 14 12 1000 10 8 Coes 6 Cres 100 4 2 10 0.1 10 1 Figure 16. Switching losses vs. collector current AM17423v1 E(μJ) Eon VCC=400V, VGE=15V Rg=10Ω, Tj=175°C 2000 1800 0 0 VCE(V) 50 25 75 100 125 150 175 Qg(nC) Figure 17. Switching losses vs.
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STGFW30V60F, STGW30V60F, STGWT30V60F Figure 20. Switching times vs. collector current t(ns) AM17427v1 VCC=400V, VGE=15V Electrical characteristics Figure 21. Switching times vs. gate resistance 1000 Tj=175°C, Rg=10Ω AM17428v1 t(ns) tdoff VCC=400V, VGE=15V Tj=175°C, IC=30A tdoff 100 tdon tr 100 tdon tf tf tr 10 0 20 10 30 40 50 60 IC(A) 10 0 10 20 30 40 Rg(Ω) Figure 22.
PAGE 10
Electrical characteristics STGFW30V60F, STGW30V60F, STGWT30V60F Figure 23. Thermal data for TO-3PF ZthTO2T_A K d=0.5 0.2 0.1 10-1 0.05 0.02 0.01 Single pulse 10-2 10-5 10-4 10-2 10-3 tp (s) 10-1 Figure 24. Thermal data for TO-3P and TO-247 ZthTO2T_B K δ=0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c δ=tp/t 0.
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STGFW30V60F, STGW30V60F, STGWT30V60F 3 Test circuits Test circuits Figure 25. Test circuit for inductive load switching Figure 26. Gate charge test circuit AM01504v1 AM01505v1 Figure 27.
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Package mechanical data 4 STGFW30V60F, STGW30V60F, STGWT30V60F Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-3PF, STGFW30V60F Figure 28.
PAGE 13
STGFW30V60F, STGW30V60F, STGWT30V60F Package mechanical data Table 7. TO-3PF mechanical data mm Dim. Min. Typ. Max. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 5.45 H 15.30 15.70 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 10 DocID025005 Rev 4 10.
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Package mechanical data 4.2 STGFW30V60F, STGW30V60F, STGWT30V60F TO-247, STGW30V60F Figure 29.
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STGFW30V60F, STGW30V60F, STGWT30V60F Package mechanical data Table 8. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID025005 Rev 4 5.
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Package mechanical data 4.3 STGFW30V60F, STGW30V60F, STGWT30V60F TO-3P, STGWT30V60F Figure 30.
PAGE 17
STGFW30V60F, STGW30V60F, STGWT30V60F Package mechanical data Table 9. TO-3P mechanical data mm Dim. Min. Typ. Max. A 4.60 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 E 13.90 15.40 15.80 E1 13.60 E2 9.60 e 5.15 5.45 5.75 L 19.50 20 20.50 L1 3.50 L2 18.20 øP 3.10 18.40 18.60 3.30 Q 5 Q1 3.
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Revision history 5 STGFW30V60F, STGW30V60F, STGWT30V60F Revision history Table 10. Document revision history 18/19 Date Revision Changes 24-Jul-2013 1 Initial release. 29-Jul-2013 2 Updated Table 1: Device summary. 08-Oct-2013 3 Updated title, features and description in cover page. 08-Apr-2014 4 Updated Table 4: Static characteristics and Section 4: Package mechanical data.
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STGFW30V60F, STGW30V60F, STGWT30V60F Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.