Datasheet
DocID024362 Rev 2 9/18
STGW80V60DF, STGWT80V60DF Electrical characteristics
Figure 14. Capacitance variation Figure 15. Gate charge vs. gate-emitter voltage
Figure 16. Switching loss vs collector current Figure 17. Switching loss vs gate resistance
Figure 18. Switching loss vs temperature Figure 19. Switching loss vs collector-emitter
voltage
C
100
V
CE
(V)
(pF)
0.1 1 10
C
ies
1000
10000
C
oes
C
res
GIPD041120131358FSR
V
GE
8
0
Q
g
(nC)
(V)
0 100
I
C
= 80A
V
CC
= 480V
4
200
12
300
16
400 500
GIPD041120131406FSR
E
0
I
C
(A)
(μJ)
20 40 60
2000
80 100
4000
E
ON
6000
V
CC
= 400V, V
GE
= 15V,
R
G
= 10Ω, T
J
= 175°C
120
E
OFF
140
8000
10000
GIPD041120131413FSR
E
0
R
G
(Ω)
(μJ)
01020
2000
4000
6000
30 40
8000
E
OFF
V
CC
= 400 V, V
GE
= 15 V,
I
C
= 80 A, T
J
= 175 °C
E
ON
GIPD041120131419FSR
E
1000
T
J
(°C)
(μJ)
050
2000
3000
4000
100 150
E
OFF
V
CC
= 400V, V
GE
= 15V,
R
G
= 10Ω, I
C
= 80A
E
ON
GIPD041120131424FSR
E
0
V
CE
(V)
(μJ)
150 350
2000
4000
6000
E
OFF
T
J
= 175°C, V
GE
= 15V,
R
G
= 10Ω, I
C
= 80A
E
ON
250 450
GIPD041120131428FSR