Datasheet

Electrical characteristics STGW80V60DF, STGWT80V60DF
8/18 DocID024362 Rev 2
Figure 8. Collector current vs. switching
frequency
Figure 9. Forward bias safe operating area
Figure 10. Transfer characteristics Figure 11. Diode V
F
vs. forward current
Figure 12. Normalized V
GE(th)
vs junction
temperature
Figure 13. Normalized V
(BR)CES
vs. junction
temperature
0
40
80
120
160
110
Ic [A]
f [kHz]
G
Ω
rectangular current shape,
(duty cycle=0.5, V
CC
= 400V, R =4.7 ,
V
GE
= 0/15 V, T
J
=175°C)
Tc=80°C
Tc=100
°
C
GIPD041120131144FSR
I C
100
10
1
1
V
CE (V)
(A)
10
10 μs
100 μs
1 ms
Single pulse
Tc= 25°C, T
J <= 175°C
V
GE = 15V
100
GIPD041120131152FSR
I C
120
80
40
0
67
V
GE (V)
(A)
89
T
J =175°C
T
J =-40°C
T
J =25°C
V
CE =5V
GIPD041120131324FSR
V F
2
1.6
1.2
0.8
20
I
F (A)
(V)
40
T
J = 175°C
60 80 100
T
J = 25°C
T
J = -40°C
120 140
2.4
GIPD041120131336FSR
V GE(th)
1.1
1.0
0.6
-50
T
J (°C)
(norm)
0 50 100 150
I
C = 1mA
V
CE = V GE
0.7
0.8
0.9
GIPD041120131351FSR
V (BR)CES
1.1
1.0
0.9
-50
T
J (°C)
(norm)
0 50 100 150
I
C = 2mA
GIPD041120131353FSR