Datasheet

Electrical characteristics STGW80V60DF, STGWT80V60DF
6/18 DocID024362 Rev 2
Table 7. Diode switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
rr
Reverse recovery time
I
F
= 80 A, V
R
= 400 V,
di/dt = 1000 A/μs,
V
GE
= 15 V, see Figure 28
-60-ns
Q
rr
Reverse recovery charge - 112 - nC
I
rrm
Reverse recovery current - 3.6 - A
dI
rr/
/dt
Peak rate of fall of reverse
recovery current during t
b
- 140 - A/μs
E
rr
Reverse recovery energy - 70 - μJ
t
rr
Reverse recovery time
I
F
= 80 A, V
R
= 400 V,
di/dt = 1000 A/μs, V
GE
= 15
V; T
J
= 175 °C
see Figure 28
- 340 - ns
Q
rr
Reverse recovery charge - 2200 - nC
I
rrm
Reverse recovery current - 13 - A
dI
rr/
/dt
Peak rate of fall of reverse
recovery current during t
b
-70-A/μs
E
rr
Reverse recovery energy - 880 - μJ