Datasheet

DocID024362 Rev 2 5/18
STGW80V60DF, STGWT80V60DF Electrical characteristics
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
- 10800 - nF
C
oes
Output capacitance - 390 - pF
C
res
Reverse transfer
capacitance
- 220 - pF
Q
g
Total gate charge
V
CC
= 480 V, I
C
= 80 A,
V
GE
= 15 V, see Figure 29
- 448 - nC
Q
ge
Gate-emitter charge - 76 - nC
Q
gc
Gate-collector charge - 184 - nC
Table 6. IGBT switching characteristics (inductive load)
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 80 A,
R
G
= 5 Ω, V
GE
= 15 V,
see Figure 28
-60-ns
t
r
Current rise time - 30 - ns
(di/dt)
on
Turn-on current slope - 2200 - A/μs
t
d(off)
Turn-off delay time - 220 - ns
t
f
Current fall time - 17 - ns
E
on
(1)
1. Energy losses include reverse recovery of the diode.
Turn-on switching losses - 1.8 - mJ
E
off
(2)
2. Turn-off losses include also the tail of the collector current.
Turn-off switching losses - 1 - mJ
E
ts
Total switching losses - 2.8 - mJ
t
d(on)
Turn-on delay time
V
CE
= 400 V, I
C
= 80 A,
R
G
= 5 Ω, V
GE
= 15 V,
T
J
= 175 °C, see Figure 28
-60-ns
t
r
Current rise time - 30 - ns
(di/dt)
on
Turn-on current slope - 2100 - A/μs
t
d(off)
Turn-off delay time - 240 - ns
t
f
Current fall time - 22 - ns
E
on
(1)
Turn-on switching losses - 3.8 - mJ
E
off
(2)
Turn-off switching losses - 1.25 - mJ
E
ts
Total switching losses - 5.05 - mJ