Datasheet

DocID024362 Rev 2 3/18
STGW80V60DF, STGWT80V60DF Electrical ratings
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
V
CES
Collector-emitter voltage (V
GE
= 0) 600 V
I
C
Continuous collector current at T
C
= 25 °C 120
(1)
1. Current level is limited by bond wires
A
I
C
Continuous collector current at T
C
= 100 °C 80 A
I
CP
(2)
2. Pulse width limited by maximum junction temperature
Pulsed collector current 240 A
V
GE
Gate-emitter voltage ±20 V
I
F
Continuous forward current at T
C
= 25 °C 120
(1)
A
I
F
Continuous forward current at T
C
= 100 °C 80 A
I
FP
(2)
Pulsed forward current 360 A
P
TOT
Total dissipation at T
C
= 25 °C 469 W
T
STG
Storage temperature range - 55 to 150 °C
T
J
Operating junction temperature - 55 to 175 °C
Table 3. Thermal data
Symbol Parameter Value Unit
R
thJC
Thermal resistance junction-case IGBT 0.32 °C/W
R
thJC
Thermal resistance junction-case diode 0.66 °C/W
R
thJA
Thermal resistance junction-ambient 50 °C/W