Datasheet

Electrical characteristics STGW80V60DF, STGWT80V60DF
10/18 DocID024362 Rev 2
Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance
t
I
C (A)
(ns)
20 40 60
10
80
t
f
T J = 175°C, V GE = 15V,
R
G = 10Ω, V CC = 400V
t
doff
100
t
r
t don
100 120 140
GIPD041120131437FSR
t
10
R
G (Ω)
(ns)
01020
100
30
t
f
T J = 175°C, V GE = 15V,
I
C = 80A, V CC = 400V
40
1000
t
don
t doff
t r
GIPD041120131444FSR
Figure 22. Reverse recovery current vs. diode
current slope
Figure 23. Reverse recovery time vs. diode
current slope
Irm
0
di/dt(A/µs)
(A)
0 500 1000
40
1500
I
F = 80A, Vr = 400V
2000
60
=175°C
=25°C
80
20
T
J
TJ
100
2500
120
GIPD041120131449FSR
trr
0
di/dt(A/µs)
(ns)
0 500 1000
200
1500
I
F = 80A, Vr = 400V
2000
300
=175°C
=25°C
100
T
J
TJ
2500
GIPD041120131511FSR
Figure 24. Reverse recovery charge vs. diode
current slope
Figure 25. Reverse recovery energy vs. diode
current slope
Qrr
0
di/dt(A/µs)
(nC)
0 500 1000
6000
1500
I
F = 80A, Vr = 400V
2000
=175°C
=25°C
4000
T
J
TJ
2000
2500
GIPD041120131516FSR
Err
0
di/dt(A/µs)
(μJ)
0 500 1000
900
1500
I
F = 80A, Vr = 400V
2000
=175°C
=25°C
300
T
J
TJ
600
1200
2500
GIPD041120131521FSR