Datasheet

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This is information on a product in full production.

January 2014 DocID024362 Rev 2 1/18

STGW80V60DF

STGWT80V60DF

Trench gate field-stop IGBT, V series

600 V, 80 A very high speed

Datasheet

production data

Figure 1. Internal schematic diagram

Features

• Maximum junction temperature: T

= 175 °C

• Tail-less switching off

• V

CE(sat)

= 1.85 V (typ.) @ I

= 80 A

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Very fast soft recovery antiparallel diode

Applications

• Photovoltaic inverters

• Uninterruptible power supply

• Welding

• Power factor correction

• Very high frequency converters

Description

This device is an IGBT developed using an

advanced proprietary trench gate field stop

structure. The device is part of the V series of

IGBTs, which represent an optimum compromise

between conduction and switching losses to

maximize the efficiency of very high frequency

converters. Furthermore, a positive V

CE(sat)

temperature coefficient and very tight parameter

distribution result in safer paralleling operation.

C (2 or TAB)

G (1)

E (3)

TO-247

TO-3P

TAB

Table 1. Device summary

Order code Marking Package Packaging

STGW80V60DF GW80V60DF TO-247 Tube

STGWT80V60DF GWT80V60DF TO-3P Tube

www.st.com

Summary of content (18 pages)

PAGE 1
STGW80V60DF STGWT80V60DF Trench gate field-stop IGBT, V series 600 V, 80 A very high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C TAB • Tail-less switching off • VCE(sat) = 1.85 V (typ.) @ IC = 80 A • Tight parameters distribution 2 3 3 1 2 1 • Safe paralleling • Low thermal resistance • Very fast soft recovery antiparallel diode TO-247 TO-3P Applications Figure 1.
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Contents STGW80V60DF, STGWT80V60DF Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PAGE 3
STGW80V60DF, STGWT80V60DF 1 Electrical ratings Electrical ratings Table 2.
PAGE 4
Electrical characteristics 2 STGW80V60DF, STGWT80V60DF Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. VF 4/18 Unit V 1.85 VGE = 15 V, IC = 80 A Collector-emitter saturation TJ = 125 °C voltage VGE = 15 V, IC = 80 A TJ = 175 °C Forward on-voltage Max. 600 VGE = 15 V, IC = 80 A VCE(sat) Typ. 2.3 2.15 V 2.4 IF = 80 A 1.
PAGE 5
STGW80V60DF, STGWT80V60DF Electrical characteristics Table 5. Dynamic characteristics Symbol Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 480 V, IC = 80 A, VGE = 15 V, see Figure 29 Qge Gate-emitter charge Qgc Gate-collector charge Min. Typ. Max. Unit - 10800 - nF - 390 - pF - 220 - pF - 448 - nC - 76 - nC - 184 - nC Table 6.
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Electrical characteristics STGW80V60DF, STGWT80V60DF Table 7. Diode switching characteristics (inductive load) Symbol 6/18 Parameter Test conditions trr Reverse recovery time Qrr Reverse recovery charge IF = 80 A, VR = 400 V, di/dt = 1000 A/μs, VGE = 15 V, see Figure 28 Min. Typ. Max. Unit - 60 - ns - 112 - nC - 3.
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STGW80V60DF, STGWT80V60DF 2.1 Electrical characteristics Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature GIPD041120131017FSR Ptot (W) Figure 3. Collector current vs. case temperature 400 120 300 90 200 60 100 30 0 0 25 50 GIPD041120131118FSR IC (A) 11V VGE=15V 9V VGE ≥ 15V, TJ ≤ 175 °C 0 0 75 100 125 150 175 TC(°C) Figure 4. Output characteristics (TJ = 25°C) GIPD011020131024FSR IC (A) 50 25 75 100 125 150 175 TC(°C) Figure 5.
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Electrical characteristics STGW80V60DF, STGWT80V60DF Figure 8. Collector current vs. switching frequency GIPD041120131144FSR Ic [A] 160 Figure 9. Forward bias safe operating area GIPD041120131152FSR IC (A) Tc=80°C 100 120 Tc=100 °C 10 μs 80 10 40 rectangular current shape, (duty cycle=0.5, VCC = 400V, RG=4.7 Ω, VGE = 0/15 V, TJ =175°C) 0 1 1 ms 1 1 f [kHz] 10 Figure 10.
PAGE 9
STGW80V60DF, STGWT80V60DF Electrical characteristics Figure 14. Capacitance variation Figure 15. Gate charge vs. gate-emitter voltage GIPD041120131358FSR C (pF) GIPD041120131406FSR VGE (V) 16 IC= 80A VCC= 480V Cies 10000 12 8 1000 4 Coes 100 0.1 1 Cres VCE(V) 10 Figure 16. Switching loss vs collector current E (μJ) 10000 GIPD041120131413FSR VCC = 400V, VGE = 15V, RG = 10Ω, TJ = 175°C 0 0 EON 300 400 500 Qg(nC) GIPD041120131419FSR E (μJ) 6000 6000 200 Figure 17.
PAGE 10
Electrical characteristics STGW80V60DF, STGWT80V60DF Figure 20. Switching times vs. collector current Figure 21. Switching times vs. gate resistance t (ns) GIPD041120131437FSR TJ= 175°C, VGE= 15V, RG= 10Ω, VCC= 400V GIPD041120131444FSR t (ns) TJ= 175°C, VGE= 15V, IC= 80A, VCC= 400V tdoff tdoff 1000 100 tdon tdon 100 tr tr tf 10 20 tf 40 60 80 100 120 140 IC(A) Figure 22. Reverse recovery current vs. diode current slope Irm (A) 10 0 10 20 30 40 RG(Ω) Figure 23.
PAGE 11
STGW80V60DF, STGWT80V60DF Electrical characteristics Figure 26. Thermal impedance for IGBT ZthTO2T_A K d=0.5 0.2 0.1 10-1 0.05 0.02 0.01 Single pulse 10-2 10-5 10-4 10-3 10-2 10-1 tp (s) Figure 27.
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Test circuits 3 STGW80V60DF, STGWT80V60DF Test circuits Figure 28. Test circuit for inductive load switching Figure 29. Gate charge test circuit AM01504v1 Figure 30. Switching waveform AM01505v1 Figure 31.
PAGE 13
STGW80V60DF, STGWT80V60DF 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Figure 32. TO-247 drawing 0075325_G Table 8. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.
PAGE 14
Package mechanical data STGW80V60DF, STGWT80V60DF Table 8. TO-247 mechanical data mm. Dim. Min. Typ. b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 14/18 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID024362 Rev 2 5.
PAGE 15
STGW80V60DF, STGWT80V60DF Package mechanical data Figure 33.
PAGE 16
Package mechanical data STGW80V60DF, STGWT80V60DF Table 9. TO-3P mechanical data mm Dim. Min. Typ. A 4.60 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 E 13.90 15.40 15.80 E1 13.60 E2 9.60 e 5.15 5.45 5.75 L 19.50 20 20.50 L1 16/18 Max. 3.50 L2 18.20 øP 3.10 18.40 18.60 3.30 Q 5 Q1 3.
PAGE 17
STGW80V60DF, STGWT80V60DF 5 Revision history Revision history Table 10. Document revision history Date Revision 12-Mar-2013 1 Initial release. 2 Updated title, features and description in cover page. Document status promoted from preliminary to production data. Updated Table 4: Static characteristics, Table 5: Dynamic characteristics, Table 6: IGBT switching characteristics (inductive load) and Table 7: Diode switching characteristics (inductive load). Inserted Section 2.
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STGW80V60DF, STGWT80V60DF Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.