Datasheet
Table Of Contents
- Figure 1. Internal schematic diagram
- Table 1. Device summary
- 1 Electrical ratings
- 2 Electrical characteristics
- Table 4. Static characteristics
- Table 5. Dynamic characteristics
- Table 6. Switching characteristics (inductive load)
- 2.1 Electrical characteristics (curve)
- Figure 2. Output characteristics (TJ = 25°C)
- Figure 3. Output characteristics (TJ = 175°C)
- Figure 4. Transfer characteristics
- Figure 5. Collector current vs. case temperature
- Figure 6. Power dissipation vs. case temperature
- Figure 7. VCE(sat) vs. junction temperature
- Figure 8. VCE(sat) vs. collector current
- Figure 9. Forward bias safe operating area
- Figure 10. Normalized V(BR)CES vs. junction temperature
- Figure 11. Normalized VGE(th) vs. junction temperature
- Figure 12. Gate charge vs. gate-emitter voltage
- Figure 13. Switching loss vs temperature
- Figure 14. Switching loss vs gate resistance
- Figure 15. Switching loss vs collector current
- Figure 16. Switching loss vs collector emitter voltage
- Figure 17. Switching times vs collector current
- Figure 18. Switching times vs gate resistance
- Figure 19. Capacitance variations
- Figure 20. Collector current vs. switching frequency
- Figure 21. Thermal impedance
- 3 Test circuits
- 4 Package information
- 5 Revision history
DocID025187 Rev 4 9/16
STGW60H65FB, STGWT60H65FB Electrical characteristics
Figure 20. Collector current vs. switching
frequency
Figure 21. Thermal impedance
20
40
60
80
100
110
Ic (A)
f (kHz)
G
Ω
rectangular current shape,
(duty cycle=0.5, V
CC
= 400V, R =10
,
V
GE
= 0/15 V, T
J
=175°C)
Tc=80°C
Tc=100
°
C
GIPD080120151105FSR
ZthTO2T_A
10
-5
10
-4
10
-3
10
-2
10
-1
tp
(s)
10
-2
10
-1
K
Single pulse
d=0.5
0.01
0.02
0.05
0.1
0.2