Datasheet
Table Of Contents
- Figure 1. Internal schematic diagram
- Table 1. Device summary
- 1 Electrical ratings
- 2 Electrical characteristics
- Table 4. Static characteristics
- Table 5. Dynamic characteristics
- Table 6. Switching characteristics (inductive load)
- 2.1 Electrical characteristics (curve)
- Figure 2. Output characteristics (TJ = 25°C)
- Figure 3. Output characteristics (TJ = 175°C)
- Figure 4. Transfer characteristics
- Figure 5. Collector current vs. case temperature
- Figure 6. Power dissipation vs. case temperature
- Figure 7. VCE(sat) vs. junction temperature
- Figure 8. VCE(sat) vs. collector current
- Figure 9. Forward bias safe operating area
- Figure 10. Normalized V(BR)CES vs. junction temperature
- Figure 11. Normalized VGE(th) vs. junction temperature
- Figure 12. Gate charge vs. gate-emitter voltage
- Figure 13. Switching loss vs temperature
- Figure 14. Switching loss vs gate resistance
- Figure 15. Switching loss vs collector current
- Figure 16. Switching loss vs collector emitter voltage
- Figure 17. Switching times vs collector current
- Figure 18. Switching times vs gate resistance
- Figure 19. Capacitance variations
- Figure 20. Collector current vs. switching frequency
- Figure 21. Thermal impedance
- 3 Test circuits
- 4 Package information
- 5 Revision history
Electrical characteristics STGW60H65FB, STGWT60H65FB
8/16 DocID025187 Rev 4
Figure 14. Switching loss vs gate resistance Figure 15. Switching loss vs collector current
E(μJ)
2100
1300
500
2
R
G
(Ω)
610
2900
V
CC
= 400V, V
GE
= 15V
I
C
= 60A, T
J
= 175 °C
14 18
E
OFF
E
ON
GIPD280820131527FSR
E (μJ)
2000
1000
0
0
I
C
(A)
20 40 60 80
3000
4000
5000
6000
7000
V
CC
= 400V, V
GE
= 15V
R
g
= 10Ω, T
J
= 175°C
100
E
OFF
E
ON
GIPD280820131538FSR
Figure 16. Switching loss vs collector emitter
voltage
Figure 17. Switching times vs collector current
E (μJ)
2300
1300
300
150
V
CE
(V)
250 350 450
3300
T
J
= 175°C, V
GE
= 15V
R
g
= 10Ω, I
C
= 60A
E
OFF
E
ON
4300
GIPD280820131554FSR
t
(ns)
100
10
1
0
I
C
(A)
20 40 60 80
T
J
= 175°C, V
GE
= 15V
R
g
= 10Ω, V
CC
= 400V
100
t
f
t
do
t
don
t
r
GIPD280820131613FSR
Figure 18. Switching times vs gate resistance Figure 19. Capacitance variations
t
(ns)
100
10
R
g
(Ω)
48
T
J
= 175°C, V
GE
= 15V
I
C
= 60A, V
CC
= 400V
12
t
f
t
do
16
t
don
t
r
20
GIPD280820131622FSR
C(pF)
1000
100
10
0.1
V
CE
(V)
110
10000
C
ies
C
oes
C
res
100
f = 1 MHz
GIPD280820131518FSR