Datasheet

DocID025187 Rev 4 7/16
STGW60H65FB, STGWT60H65FB Electrical characteristics
Figure 8. V
CE(sat)
vs. collector current Figure 9. Forward bias safe operating area
V CE(sat)
1.4
1.2
020
I
C (A)
(V)
40 60 80
2.2
2.0
1.8
1.6
V
GE = 15V
T
J = 175°C
T
J = 25°C
T
J = -40°C
2.4
100
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Figure 10. Normalized V
(BR)CES
vs. junction
temperature
Figure 11. Normalized V
GE(th)
vs. junction
temperature
V (BR)CES
(norm)
1.1
1.0
0.9
-50
T
J (°C)
0 50 100 150
I
C = 2mA
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V GE(th)
(norm)
0.8
0.7
0.6
-50
T
J (°C)
0 50 100 150
0.9
1.0
I
C = 1mA
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Figure 12. Gate charge vs. gate-emitter voltage Figure 13. Switching loss vs temperature
V GE
(V)
4
2
0
0
Q
g (nC)
50 100 150 200
6
8
250 300 350
10
12
14
V
CC = 520V, I C = 60A
I
g = 1mA
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E (μJ)
1800
1000
200
25
T
J (°C)
50 75 100 125
2600
V
CC = 400V, V GE = 15V
R
g = 10Ω, I C = 60A
150
E
OFF
E ON
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