Datasheet
Table Of Contents
- Figure 1. Internal schematic diagram
- Table 1. Device summary
- 1 Electrical ratings
- 2 Electrical characteristics
- Table 4. Static characteristics
- Table 5. Dynamic characteristics
- Table 6. Switching characteristics (inductive load)
- 2.1 Electrical characteristics (curve)
- Figure 2. Output characteristics (TJ = 25°C)
- Figure 3. Output characteristics (TJ = 175°C)
- Figure 4. Transfer characteristics
- Figure 5. Collector current vs. case temperature
- Figure 6. Power dissipation vs. case temperature
- Figure 7. VCE(sat) vs. junction temperature
- Figure 8. VCE(sat) vs. collector current
- Figure 9. Forward bias safe operating area
- Figure 10. Normalized V(BR)CES vs. junction temperature
- Figure 11. Normalized VGE(th) vs. junction temperature
- Figure 12. Gate charge vs. gate-emitter voltage
- Figure 13. Switching loss vs temperature
- Figure 14. Switching loss vs gate resistance
- Figure 15. Switching loss vs collector current
- Figure 16. Switching loss vs collector emitter voltage
- Figure 17. Switching times vs collector current
- Figure 18. Switching times vs gate resistance
- Figure 19. Capacitance variations
- Figure 20. Collector current vs. switching frequency
- Figure 21. Thermal impedance
- 3 Test circuits
- 4 Package information
- 5 Revision history
Electrical characteristics STGW60H65FB, STGWT60H65FB
6/16 DocID025187 Rev 4
2.1 Electrical characteristics (curve)
Figure 2. Output characteristics (T
J
= 25°C) Figure 3. Output characteristics (T
J
= 175°C)
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Figure 4. Transfer characteristics Figure 5. Collector current vs. case temperature
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I
C
60
40
20
0
0
50
T
C
(°C)
75
(A)
25 100
80
125 150
V
GE
= 15V, T
J
= 175 °C
GIPD270820131347FSR
Figure 6. Power dissipation vs. case
temperature
Figure 7. V
CE(sat)
vs. junction temperature
P
tot
300
200
100
0
0
50
T
C
(°C)
75
(W)
25 100 125 150
V
GE
= 15V, T
J
= 175 °C
GIPD270820131401FSR
V
CE(sat)
1.8
1.6
1.4
1.2
-50
T
j
(°C)
(V)
100
2.0
050
2.2
150
2.4
2.6
V
GE
= 15V
I
C
= 120A
I
C
= 60A
I
C
= 30A
GIPD021020131457FSR