Datasheet

Electrical characteristics STGW60H65FB, STGWT60H65FB
4/16 DocID025187 Rev 4
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0)
I
C
= 2 mA 650 V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
= 15 V, I
C
= 60 A 1.60 2.0
V
V
GE
= 15 V, I
C
= 60 A
T
J
= 125 °C
1.75
V
GE
= 15 V, I
C
= 60 A
T
J
= 175 °C
1.85
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 1 mA 5 6 7 V
I
CES
Collector cut-off current
(V
GE
= 0)
V
CE
= 650 V 25 µA
I
GES
Gate-emitter leakage
current (V
CE
= 0)
V
GE
= ± 20 V ±250 nA
Table 5. Dynamic characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-7792-
pF
C
oes
Output capacitance - 262 -
C
res
Reverse transfer
capacitance
-158-
Q
g
Total gate charge
V
CC
= 520 V, I
C
= 60 A,
V
GE
= 15 V, see Figure 23
-306-
nCQ
ge
Gate-emitter charge - 126 -
Q
gc
Gate-collector charge - 58 -