Datasheet
Table Of Contents
- Figure 1. Internal schematic diagram
- Table 1. Device summary
- 1 Electrical ratings
- 2 Electrical characteristics
- Table 4. Static characteristics
- Table 5. Dynamic characteristics
- Table 6. Switching characteristics (inductive load)
- 2.1 Electrical characteristics (curve)
- Figure 2. Output characteristics (TJ = 25°C)
- Figure 3. Output characteristics (TJ = 175°C)
- Figure 4. Transfer characteristics
- Figure 5. Collector current vs. case temperature
- Figure 6. Power dissipation vs. case temperature
- Figure 7. VCE(sat) vs. junction temperature
- Figure 8. VCE(sat) vs. collector current
- Figure 9. Forward bias safe operating area
- Figure 10. Normalized V(BR)CES vs. junction temperature
- Figure 11. Normalized VGE(th) vs. junction temperature
- Figure 12. Gate charge vs. gate-emitter voltage
- Figure 13. Switching loss vs temperature
- Figure 14. Switching loss vs gate resistance
- Figure 15. Switching loss vs collector current
- Figure 16. Switching loss vs collector emitter voltage
- Figure 17. Switching times vs collector current
- Figure 18. Switching times vs gate resistance
- Figure 19. Capacitance variations
- Figure 20. Collector current vs. switching frequency
- Figure 21. Thermal impedance
- 3 Test circuits
- 4 Package information
- 5 Revision history
Package information STGW60H65FB, STGWT60H65FB
14/16 DocID025187 Rev 4
Table 8. TO-3P mechanical data
Dim.
mm
Min. Typ. Max.
A 4.60 4.80 5
A1 1.45 1.50 1.65
A2 1.20 1.40 1.60
b 0.80 1.00 1.20
b1 1.80 2.00 2.20
b2 2.80 3.00 3.20
c 0.55 0.60 0.75
D 19.70 19.90 20.10
D1 13.70 13.90 14.10
E 15.40 15.60 15.80
E1 13.40 13.60 13.80
E2 9.40 9.60 9.90
e 5.15 5.45 5.75
L 19.80 20 20.20
L1 3.30 3.50 3.70
L2 18.20 18.40 18.60
øP 3.30 3.40 3.50
øP1 3.10 3.20 3.30
Q 4.80 5 5.20
Q1 3.60 3.80 4