Datasheet

This is information on a product in full production.
April 2015 DocID025187 Rev 4 1/16
16
STGW60H65FB
STGWT60H65FB
Trench gate field-stop IGBT, HB series
650 V, 60 A high speed
Datasheet - production data
Figure 1. Internal schematic diagram
Features
• Maximum junction temperature: T
J
= 175 °C
• High speed switching series
• Minimized tail current
• V
CE(sat)
= 1.6 V (typ.) @ I
C
= 60 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
Applications
• Photovoltaic inverters
• High frequency converters
Description
These are IGBT devices developed using an
advanced proprietary trench gate and field-stop
structure. The devices are part of the new HB
series of IGBTs which represent an optimum
compromise between conduction and switching
loss to maximize the efficiency of any frequency
converter. Furthermore, a slightly positive V
CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
C (2, TAB)
E (3)
G (1)
TO-247
1
2
3
TO-3P
1
2
3
TAB
Table 1. Device summary
Order code Marking Package Packing
STGW60H65FB GW60H65FB TO-247 Tube
STGWT60H65FB GWT60H65FB TO-3P Tube
www.st.com