Datasheet

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This is information on a product in full production.

April 2014 DocID025171 Rev 5 1/20

STGW40H65FB, STGFW40H65FB,

STGWT40H65FB

Trench gate field-stop IGBT, HB series

650 V, 40 A high speed

Datasheet

production data

Figure 1. Internal schematic diagram

Features

• Maximum junction temperature: T

= 175 °C

• High speed switching series

• Minimized tail current

• Very low saturation voltage: V

CE(sat)

= 1.6 V

(typ.) @ I

= 40 A

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

• Lead free package

Applications

• Photovoltaic inverters

• High frequency converters

Description

This device is an IGBT developed using an

advanced proprietary trench gate and field-stop

structure. The device is part of the new HB series

of IGBTs, which represent an optimum

compromise between conduction and switching

losses to maximize the efficiency of any

frequency converter. Furthermore, a slightly

positive V

CE(sat)

temperature coefficient and very

tight parameter distribution result in safer

paralleling operation.

TO-247

TO-3P

TAB

111

TO-3PF

C (2, TAB)

E (3)

G (1)

Table 1. Device summary

Order code Marking Package Packaging

STGW40H65FB GW40H65FB TO-247 Tube

STGFW40H65FB GFW40H65FB TO-3PF Tube

STGWT40H65FB GWT40H65FB TO-3P Tube

www.st.com

Summary of content (20 pages)

PAGE 1
STGW40H65FB, STGFW40H65FB, STGWT40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data Features • Maximum junction temperature: TJ = 175 °C 1 • High speed switching series • Minimized tail current 3 2 1 TO-3PF • Very low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A TAB • Tight parameters distribution 2 3 3 2 1 TO-247 1 • Safe paralleling • Low thermal resistance • Lead free package TO-3P Figure 1.
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Contents STGW40H65FB, STGFW40H65FB, STGWT40H65FB Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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STGW40H65FB, STGFW40H65FB, STGWT40H65FB 1 Electrical ratings Electrical ratings Table 2.
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Electrical characteristics 2 STGW40H65FB, STGFW40H65FB, STGWT40H65FB Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) Unit V 1.
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STGW40H65FB, STGFW40H65FB, STGWT40H65FB Electrical characteristics Table 6. Switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Test conditions Min. Typ. Max.
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Electrical characteristics 2.1 STGW40H65FB, STGFW40H65FB, STGWT40H65FB Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature for TO-247 and TO-3P AM16054v1 Ptot (W) VGE =15 V, TJ = 175 °C Figure 3. Collector current vs. case temperature for TO-247 and TO-3P AM16053v1 IC (A) VGE = 15 V 250 TJ = 175 °C 80 200 60 150 40 100 20 50 0 0 25 50 75 100 125 150 Figure 4. Power dissipation vs.
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STGW40H65FB, STGFW40H65FB, STGWT40H65FB Figure 8. VCE(sat) vs. junction temperature AM16055v1 VCE(sat) (V) VGE= 15V Electrical characteristics Figure 9. VCE(sat) vs. collector current VCE(sat) (V) AM16056v1 TJ= 175°C VGE= 15V 2.3 2.3 IC= 80A 2.1 2.1 TJ= 25°C 1.9 IC= 40A 1.9 1.7 1.7 IC= 20A 1.5 1.3 -50 TJ= -40°C 1.5 1.3 0 50 100 Figure 10. Collector current vs. switching frequency for TO-247 and TO-3P GIPG110420141030FSR Ic [A] 1.1 10 150 TJ(°C) 30 70 IC(A) 50 Figure 11.
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Electrical characteristics STGW40H65FB, STGFW40H65FB, STGWT40H65FB Figure 14. Transfer characteristics Figure 15. Normalized VGE(th) vs junction temperature AM16052v1 IC (A) AM16060v1 VGE(th) (norm) VCE = VGE, IC = 1 mA VCE= 5 V 120 1.0 0.9 80 0.8 40 0 TJ = -40°C TJ = 25°C TJ =175°C 8 7 6 9 10 0.7 Figure 16. Normalized V(BR)CES vs. junction temperature AM16059v1 V(BR)CES 0.6 -50 VGE(V) 0 50 100 150 TJ(°C) Figure 17. Capacitance variation AM16071v1 C(pF) (norm) 1.
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STGW40H65FB, STGFW40H65FB, STGWT40H65FB Figure 20. Switching loss vs gate resistance AM16067v2 E(μJ) TJ= 175°C, VGE= 15V IC= 40A, VCC= 400V Electrical characteristics Figure 21. Switching loss vs temperature E (μJ) 1650 AM16063v1 VCC= 400V, VGE= 15V Rg= 10Ω, IC= 40A EON 1800 EON 1250 1400 850 1000 EOFF 450 EOFF 600 0 4 6 8 16 20 Figure 22. Switching loss vs collector-emitter voltage AM16064v1 E (μJ) 1800 50 -40 -15 Rg(Ω) 10 60 85 TJ(°C) 110 135 Figure 23. Switching times vs.
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Electrical characteristics STGW40H65FB, STGFW40H65FB, STGWT40H65FB Figure 25. Thermal impedance for TO-247 and TO-3P ZthTO2T_B K δ=0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c δ=tp/t 0.
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STGW40H65FB, STGFW40H65FB, STGWT40H65FB Electrical characteristics Figure 26. Thermal impedance for TO-3PF ZthTO2T_A K d=0.5 0.2 0.1 10-1 0.05 0.02 0.
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Test circuits 3 STGW40H65FB, STGFW40H65FB, STGWT40H65FB Test circuits Figure 27. Test circuit for inductive load switching Figure 28. Gate charge test circuit AM01504v1 Figure 29.
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STGW40H65FB, STGFW40H65FB, STGWT40H65FB 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-247, STGW40H65FB Figure 30.
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Package mechanical data STGW40H65FB, STGFW40H65FB, STGWT40H65FB Table 7. TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 14/20 Max. 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID025171 Rev 5 5.
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STGW40H65FB, STGFW40H65FB, STGWT40H65FB 4.2 Package mechanical data TO-3PF, STGFW40H65FB Figure 31.
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Package mechanical data STGW40H65FB, STGFW40H65FB, STGWT40H65FB Table 8. TO-3PF mechanical data mm Dim. Min. Typ. A 5.30 5.70 C 2.80 3.20 D 3.10 3.50 D1 1.80 2.20 E 0.80 1.10 F 0.65 0.95 F2 1.80 2.20 G 10.30 11.50 G1 16/20 Max. 5.45 H 15.30 15.70 L 9.80 L2 22.80 23.20 L3 26.30 26.70 L4 43.20 44.40 L5 4.30 4.70 L6 24.30 24.70 L7 14.60 15 N 1.80 2.20 R 3.80 4.20 Dia 3.40 3.80 10 DocID025171 Rev 5 10.
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STGW40H65FB, STGFW40H65FB, STGWT40H65FB 4.3 Package mechanical data TO-3P, STGWT40H65FB Figure 32.
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Package mechanical data STGW40H65FB, STGFW40H65FB, STGWT40H65FB Table 9. TO-3P mechanical data mm Dim. Min. Typ. A 4.60 5 A1 1.45 1.50 1.65 A2 1.20 1.40 1.60 b 0.80 1 1.20 b1 1.80 2.20 b2 2.80 3.20 c 0.55 0.60 0.75 D 19.70 19.90 20.10 D1 E 13.90 15.40 15.80 E1 13.60 E2 9.60 e 5.15 5.45 5.75 L 19.50 20 20.50 L1 18/20 Max. 3.50 L2 18.20 øP 3.10 18.40 18.60 3.30 Q 5 Q1 3.
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STGW40H65FB, STGFW40H65FB, STGWT40H65FB 5 Revision history Revision history Document Table 10. Document revision history Date Revision Changes 30-Aug-2013 1 Initial release. 11-Sep-2013 2 Document status changed from preliminary to production data. Inserted Section 2.1: Electrical characteristics (curves). 28-Feb-2014 3 Updated title and description in cover page. 05-Mar-2014 4 Updated units in Table 6: Switching characteristics (inductive load).
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STGW40H65FB, STGFW40H65FB, STGWT40H65FB Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.