Datasheet

DocID024745 Rev 1 9/17
STGW20H60DF, STGWT20H60DF Electrical characteristics
Figure 12. Diode V
F
vs. forward current Figure 13. Gate charge vs. gate-emitter voltage
Figure 14. Capacitance variations vs. V
CE
Figure 15. Switching losses vs. gate resistance
Figure 16. Switching losses vs. collector
current
Figure 17. Switching losses vs. temperature
V F
1.9
1.5
1.1
10 50
I
F (A)
(V)
30
T
J = -40 °C
20
40
2.3
T
J = 25 °C
T
J = 175 °C
AM16293V1
V GE
8
4
0
0
Q
g (nC)
(V)
80
V
CC = 400 V
I
C = 20 A
40
120
12
16
AM16294V1
C
1000
100
10
0.1
V
CE (V)
(pF)
10
C
oes
1
C
ies
C res
AM16295V1
E
550
450
350
0
R
G (Ω)
(µJ)
20
E
OFF
10
E
ON
30 40
650
750
V
CC = 400 V, V GE = 15V,
I
C = 20 A, T J = 175°C
AM16296V1
E
600
400
200
10
I
C (A)
(µJ)
20
E
OFF
E ON
30
800
1000
V
CC = 400 V, V GE = 15V,
R
g = 10 Ω, T J = 175°C
AM162961V1
E
400
300
200
25
T
J (°C)
(µJ)
75
E
OFF
E ON
125
V
CC = 400 V, V GE = 15V,
R
g = 10 Ω, I C = 20 A
AM16297V1