Datasheet

Electrical characteristics STGW20H60DF, STGWT20H60DF
8/17 DocID024745 Rev 1
Figure 6. Collector current vs. case temperature Figure 7. Collector current vs. frequency
Figure 8. V
CE(sat)
vs. junction temperature Figure 9. V
CE(sat)
vs. collector current
Figure 10. Forward bias safe operating area Figure 11. Thermal impedance
IC
24
16
8
0
050
T
C(°C)
100
(A)
25 75
32
40
125
AM16282v1
I C
30
20
10
1
f(kHz)
(A)
T
c = 80°C
Rectangular current shape
(duty cycle= 0.5, V
CC = 400 V
R
g = 10 Ω, V GE = 0/15V, TJ= 175°C
10
40
T
c = 100°C
50
60
AM162981V1
V CE(sat)
1.9
1.7
1.5
1.3
-75 25
T
J (°C)
125
(V)
-25 75
2.1
2.3
I
C = 40 A
V
GE = 15 V
I
C = 20 A
I
C = 10 A
AM16290V1
V CE(sat)
2.2
1.8
1.4
1.0
020
I
C (A)
(V)
10 30
V
GE = 15 V
T
J = 175 °C
T
J = -40 °C
T
J = 25 °C
AM16291V1
(single pulse T C =25°C,
T
J <=175°C; V GE =15V)
I C
10
1
0.1
1 100
V
CE (V)
(A)
10
1 ms
100 µs
V
CE(sat)
limit
AM16280V1
10
-5
10
-4
10
-3
10
-2
10
-1
t p
(s)
10
-2
10
-1
K
0.2
0.05
0.02
0.01
0.1
Zth=k Rthj-c
δ=tp/τ
tp
τ
Single pulse
δ=0.5
ZthTO2T_B