Datasheet

Electrical characteristics STGW20H60DF, STGWT20H60DF
4/17 DocID024745 Rev 1
2 Electrical characteristics
T
J
= 25 °C unless otherwise specified.
Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)CES
Collector-emitter
breakdown voltage
(V
GE
= 0)
I
C
= 2 mA 600 V
V
CE(sat)
Collector-emitter saturation
voltage
V
GE
= 15 V, I
C
= 20 A 1.6 2.0
V
V
GE
= 15 V, I
C
= 20 A
T
J
= 125 °C
1.75
V
GE
= 15 V, I
C
= 20 A
T
J
= 175 °C
1.8
V
GE(th)
Gate threshold voltage V
CE
= V
GE
, I
C
= 1 mA 5 6 7 V
I
CES
Collector cut-off current
(V
GE
= 0)
V
CE
= 600 V 25 μA
I
GES
Gate-emitter leakage
current (V
CE
= 0)
V
GE
= ± 20 V 250 nA
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
ies
Input capacitance
V
CE
= 25 V, f = 1 MHz,
V
GE
= 0
-2750- pF
C
oes
Output capacitance - 110 - pF
C
res
Reverse transfer
capacitance
-65-pF
Q
g
Total gate charge
V
CC
= 400 V, I
C
= 20 A,
V
GE
= 15 V
-115-nC
Q
ge
Gate-emitter charge - 22 - nC
Q
gc
Gate-collector charge - 45 - nC