Datasheet

Electrical characteristics STGB30V60F, STGP30V60F
8/19 DocID025049 Rev 4
Figure 14. Switching losses vs. junction
temperature
Figure 15. Switching losses vs. collector
emitter voltage
Figure 16. Switching times vs. collector current Figure 17. Switching times vs. gate resistance
Figure 18. Transfer characteristics Figure 19. Safe operating area
E(μJ)
25
T
J(°C)
200
50
75
100
300
100 125
V
CC=400V,
V
GE=15V
I
C=30A,
Rg=10Ω
400
500
600
Eon
Eoff
150
0
700
800
AM17425v1
E(μJ)
150
V
CE(V)
500
200
250
100
900
300 350
V
GE=15V,
Tj=175°C
I
C=30A,
Rg=10Ω
Eon
Eoff
300
700
1100
400 450
AM17426v1
t(ns)
0
IC(A)
10
20
10
30 40
V
CC=400V,
Tj=175°C,
V
GE=15V
Rg=10Ω
t
doff
tdon
100
t
f
tr
50 60
AM17427v1
t(ns)
0
Rg(Ω)
10
20
10
30 40
V
CC=400V,
Tj=175°C,
V
GE=15V
I
C=30A
t
doff
tdon
100
t
r
tf
1000
AM17428v1
I C
80
60
20
0
7
(A)
8
V
GE(V)
40
Tj=175°C
Tj=25°C
Tj=-40°C
9
100
10 11
V
CE = 10 V
AM17417v1
I C
100
10
0.1
0.01
1
(A)
10
V
CE(V)
1
10μs
100μs
1ms
100
Single pulse, Tc=25°C
Tj<175°C, V
GE=15V
AM17416v1