Datasheet

DocID025049 Rev 4 7/19
STGB30V60F, STGP30V60F Electrical characteristics
Figure 8. Normalized V
GE(th)
vs junction
temperature
Figure 9. Normalized V
(BR)CES
vs. junction
temperature
Figure 10. Capacitance variations Figure 11. Gate charge vs. gate-emitter voltage
Figure 12. Switching losses vs. collector
current
Figure 13. Switching losses vs. gate resistance
V GE(th)
0.8
0.6
-50
(norm)
T
C(°C)
0.7
0
0.9
1.0
50
100
150
V
CE=VGE
IC=1mA
AM17419v1
V (BR)CES
1.1
0.9
-50
(norm)
T
C(°C)
1.0
0
50
100
150
I
C =2mA
AM17420v1
C(pF)
10
0.1
VCE(V)
1000
1
10
100
10000
Cies
Coes
Cres
AM17421v1
VGE(V)
0
0
Qg(nC)
50
100
2
150
175
4
6
8
10
12
14
16
25
125
75
V
CC = 480 V
I
C = 30 A
AM17422v1
E(μJ)
0
0
I
C(A)
400
10
20
200
600
30 40
V
CC=400V,
V
GE=15V
Rg=10Ω,
Tj=175°C
800
1000
1200
1400
Eon
Eoff
50 60
1600
1800
2000
AM17423v1
E(μJ)
0
R
g(Ω)
400
10
20
200
600
30 40
V
CC=400V,
V
GE=15V
I
C=30A,
Tj=175°C
800
1000
1200
Eon
Eoff
AM17424v1