Datasheet
This is information on a product in full production.
April 2014 DocID025049 Rev 4 1/19
19
STGB30V60F,
STGP30V60F
Trench gate field-stop IGBT, V series
600 V, 30 A very high speed
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
• Maximum junction temperature: T
J
= 175 °C
• Tail-less switching off
• V
CE(sat)
= 1.85 V (typ.) @ I
C
= 30 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate field stop
structure. The device is part of the V series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive V
CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
C (2, TAB)
G (1)
E (3)
D
2
PAK
TO-220
1
3
TAB
1
2
3
TAB
Table 1. Device summary
Order codes Marking Package Packaging
STGB30V60F GB30V60F D
2
PAK Tape and reel
STGP30V60F GP30V60F TO-220 Tube
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