Datasheet

This is information on a product in full production.
July 2013 DocID024890 Rev 1 1/18
18
STGB20V60F,
STGP20V60F
600 V, 20 A very high speed
trench gate field-stop IGBT
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
Maximum junction temperature: T
J
= 175 °C
Very high speed switching series
Tail-less switching off
Low saturation voltage: V
CE(sat)
= 1.8 V (typ.)
@ I
C
= 20 A
Tight parameters distribution
Safe paralleling
Low thermal resistance
Lead free package
Applications
Photovoltaic inverters
Uninterruptible power supply
Welding
Power factor correction
Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the "V" series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive V
CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
C (2, TAB)
E (3)
G (1)
D
2
PAK
1
3
TAB
1
2
3
TAB
TO-220
Table 1. Device summary
Order code Marking Package Packaging
STGB20V60F GB20V60F D
2
PAK Tape and reel
STGP20V60F GP20V60F TO-220 Tube
www.st.com

Summary of content (18 pages)