Datasheet
This is information on a product in full production.
July 2013 DocID024890 Rev 1 1/18
18
STGB20V60F,
STGP20V60F
600 V, 20 A very high speed
trench gate field-stop IGBT
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
• Maximum junction temperature: T
J
= 175 °C
• Very high speed switching series
• Tail-less switching off
• Low saturation voltage: V
CE(sat)
= 1.8 V (typ.)
@ I
C
= 20 A
• Tight parameters distribution
• Safe paralleling
• Low thermal resistance
• Lead free package
Applications
• Photovoltaic inverters
• Uninterruptible power supply
• Welding
• Power factor correction
• Very high frequency converters
Description
This device is an IGBT developed using an
advanced proprietary trench gate and field stop
structure. The device is part of the "V" series of
IGBTs, which represent an optimum compromise
between conduction and switching losses to
maximize the efficiency of very high frequency
converters. Furthermore, a positive V
CE(sat)
temperature coefficient and very tight parameter
distribution result in safer paralleling operation.
C (2, TAB)
E (3)
G (1)
D
2
PAK
1
3
TAB
1
2
3
TAB
TO-220
Table 1. Device summary
Order code Marking Package Packaging
STGB20V60F GB20V60F D
2
PAK Tape and reel
STGP20V60F GP20V60F TO-220 Tube
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