Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsFETsSTFI7N80K5, MOSFET

This is information on a product in full production.

October 2013 DocID025377 Rev 1 1/14

STF7N80K5,

STFI7N80K5

N-channel 800 V, 0.95 Ω typ., 6 A Zener-protected SuperMESH™ 5

Power MOSFETs in TO-220FP and I

PAKFP packages

Datasheet

production data

Figure 1. Internal schematic diagram

Features

• Worldwide best FOM (figure of merit)

• Ultra low gate charge

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

Description

These N-channel Zener-protected Power

MOSFETs are designed using ST’s revolutionary

avalanche-rugged very high voltage

SuperMESH™ 5 technology, based on an

innovative proprietary vertical structure. The

result is a dramatic reduction in on-resistance,

and ultra-low gate charge for applications which

require superior power density and high

efficiency.

TO-220FP

I PAKFP

D(2)

G(1)

S(3)

AM01476v1

Order codes V

DS(on)

max I

TOT

STF7N80K5

800 V 1.2 Ω 6 A 25 W

STFI7N80K5

Table 1. Device summary

Order codes Marking Package Packaging

STF7N80K5

7N80K5

TO-220FP

Tube

STFI7N80K5 I

PAKFP

www.st.com

Summary of content (14 pages)

PAGE 1
STF7N80K5, STFI7N80K5 N-channel 800 V, 0.95 Ω typ., 6 A Zener-protected SuperMESH™ 5 Power MOSFETs in TO-220FP and I2PAKFP packages Datasheet - production data Features Order codes VDS RDS(on)max ID PTOT 800 V 1.2 Ω 6A 25 W STF7N80K5 STFI7N80K5 • Worldwide best FOM (figure of merit) 3 1 2 1 TO-220FP 2 • Ultra low gate charge 3 • 100% avalanche tested I 2PAKFP • Zener-protected Applications Figure 1.
PAGE 2
Contents STF7N80K5, STFI7N80K5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history .
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STF7N80K5, STFI7N80K5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VGS ID Parameter Gate- source voltage Drain current (continuous) at TC = 25 °C Value Unit ± 30 V (1) A 6 Drain current (continuous) at TC = 100 °C 3.
PAGE 4
Electrical characteristics 2 STF7N80K5, STFI7N80K5 Electrical characteristics (TCASE = 25 °C unless otherwise specified). Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max.
PAGE 5
STF7N80K5, STFI7N80K5 Electrical characteristics Table 6. Switching times Symbol td(on) tr Parameter Test conditions Turn-on delay time tf Typ. Max. Unit - 11.3 - ns VDD = 400 V, ID = 3 A, RG=4.7 Ω, VGS=10 V (see Figure 17) Rise time td(off) Min. Turn-off delay time Fall time 8.3 ns 23.7 ns 20.2 ns Table 7. Source drain diode Symbol ISD ISDM VSD 1. (1) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 6 A Source-drain current (pulsed) - 24 A 1.
PAGE 6
Electrical characteristics 2.1 STF7N80K5, STFI7N80K5 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance !- V )$ ! IS EA IS IN TH AR AX 2 ON S 3 $ N M TIO BY RA PE ITED / IM , S MS 4J # 4C # MS 3INLGE PULSE 6$3 6 Figure 4. Output characteristics Figure 5.
PAGE 7
STF7N80K5, STFI7N80K5 Electrical characteristics Figure 8. Capacitance variations Figure 9. Source-drain diode forward characteristics !- V # P& !- V 63$ 6 #ISS 4* # 4* # #OSS #RSS 6$3 6 Figure 10. Normalized gate threshold voltage vs temperature !- V 6'3 TH NORM !- V 6 "2 $33 )$ ! 6'3 6 4* # Figure 12.
PAGE 8
Test circuits 3 STF7N80K5, STFI7N80K5 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 16. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 17. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.
PAGE 9
STF7N80K5, STFI7N80K5 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
PAGE 10
Package mechanical data STF7N80K5, STFI7N80K5 Table 9. TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 10/14 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.
PAGE 11
STF7N80K5, STFI7N80K5 Package mechanical data Figure 20.
PAGE 12
Package mechanical data Table 10. STF7N80K5, STFI7N80K5 I2PAKFP (TO-281) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 F1 1.20 G 4.95 H 10.00 10.40 L1 21.00 23.00 L2 13.20 14.10 L3 10.55 10.85 L4 2.70 3.20 L5 0.85 1.25 L6 7.30 7.50 - 5.20 Figure 21.
PAGE 13
STF7N80K5, STFI7N80K5 5 Revision history Revision history Table 11. Document revision history Date Revision 11-Oct-2013 1 Changes First release.
PAGE 14
STF7N80K5, STFI7N80K5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.