Datasheet

DocID024894 Rev 1 7/13
STF7N60M2 Electrical characteristics
13
Figure 8. Capacitance variations Figure 9. Output capacitance stored energy
Figure 10. Normalized gate threshold voltage
vs. temperature
Figure 11. Normalized on-resistance vs.
temperature
Figure 12. Drain-source diode forward
characteristics
Figure 13. Normalized V
DS
vs. temperature
C
100
10
1
0.1
0.1
10
V
DS (V)
(pF)
1
100
Ciss
Coss
Crss
1000
AM15818v1
E oss
2
1
0
0
V
DS (V)
(µJ)
200
100
300 400 500
600
AM15819v1
V GS(th)
0.9
0.8
0.7
0.6
T
J (°C)
(norm)
-50
1.0
I
D =250µA
0
50
100
1.1
AM15718v1
R DS(on)
1.3
0.9
0.5
-50
-25
T
J (°C)
(norm)
0
100
0.7
1.1
I
D =2.5 A
1.5
25
50
75
1.7
1.9
2.1
2.3
AM15821v1
V SD
0
2
I
SD (A)
(V)
1
3
4
0
0.2
0.4
0.6
0.8
T J =-50°C
T J =150°C
T J =25°C
5
1
1.2
1.4
AM15822v1
V DS
-50
-25
T
J (°C)
(norm)
50
100
0.93
0.95
0.97
0.99
1.01
I
D = 1mA
0
25
75
1.03
1.05
1.07
1.09
1.11
AM15823v1