Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsFETsSTF7N60M2, MOSFET

This is information on a product in full production.

June 2013 DocID024894 Rev 1 1/13

STF7N60M2

N-channel 600 V, 0.86 Ω typ., 5 A MDmesh II Plus™ low Q

Power MOSFET in TO-220FP package

Datasheet

production data

Figure 1. Internal schematic diagram

Features

• Extremely low gate charge

• Lower R

DS(on)

x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

Description

This device is an N-channel Power MOSFET

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Q

. This

revolutionary Power MOSFET associates a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. It is therefore suitable for the most

demanding high efficiency converters.

TO-220FP

AM15572v1

, TAB

Order code

Jmax

DS(on)

max

STF7N60M2 650 V 0.95 Ω 5 A

Table 1. Device summary

Order code Marking Package Packaging

STF7N60M2 7N60M2 TO-220FP Tube

www.st.com

Summary of content (13 pages)

PAGE 1
STF7N60M2 N-channel 600 V, 0.86 Ω typ., 5 A MDmesh II Plus™ low Qg Power MOSFET in TO-220FP package Datasheet - production data Features Order code VDS @ TJmax RDS(on) max ID STF7N60M2 650 V 0.95 Ω 5A • Extremely low gate charge 1 2 3 • Lower RDS(on) x area vs previous generation • Low gate input resistance TO-220FP • 100% avalanche tested • Zener-protected Applications Figure 1.
PAGE 2
Contents STF7N60M2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . .
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STF7N60M2 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VGS ID Parameter Gate-source voltage Drain current (continuous) at TC = 25 °C Value Unit ± 25 V (1) A 5 Drain current (continuous) at TC = 100 °C (1) 3.
PAGE 4
Electrical characteristics 2 STF7N60M2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 600 V IDSS Zero gate voltage VDS = 600 V drain current (VGS = 0) VDS = 600 V, TC=125 °C 1 100 µA µA IGSS Gate-body leakage current (VDS = 0) ±10 µA 3 4 V 0.86 0.95 Ω Min. Typ. Max. Unit - 271 - pF - 15.7 - pF - 0.
PAGE 5
STF7N60M2 Electrical characteristics Table 8.
PAGE 6
Electrical characteristics 2.1 STF7N60M2 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM15813v1 ID (A) 10 s ai re n) s a DS(o i th R in ax n io y m t b a er ed Op mit Li 1 10µs 100µs 1ms 10ms Tj=150°C Tc=25°C Single pulse 0.1 0.01 0.1 10 1 100 VDS(V) Figure 4. Output characteristics Figure 5.
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STF7N60M2 Electrical characteristics Figure 8. Capacitance variations Figure 9. Output capacitance stored energy AM15818v1 C (pF) AM15819v1 Eoss (µJ) 1000 Ciss 2 100 10 Coss 1 1 Crss 0.1 0.1 1 100 10 Figure 10. Normalized gate threshold voltage vs. temperature AM15718v1 VGS(th) (norm) 1.1 0 0 VDS(V) 300 200 100 500 600 VDS(V) Figure 11. Normalized on-resistance vs. temperature AM15821v1 RDS(on) (norm) ID=2.5 A 2.3 ID=250µA 400 2.1 1.0 1.9 1.7 0.9 1.5 1.3 0.8 1.1 0.
PAGE 8
Test circuits 3 STF7N60M2 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 16. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 17. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.
PAGE 9
STF7N60M2 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
PAGE 10
Package mechanical data STF7N60M2 Table 9. TO-220FP mechanical data mm Dim. Min. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 10/13 Typ. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.
PAGE 11
STF7N60M2 Package mechanical data Figure 20.
PAGE 12
Revision history 5 STF7N60M2 Revision history Table 10. Document revision history 12/13 Date Revision 26-Jun-2013 1 Changes First release.
PAGE 13
STF7N60M2 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.