Datasheet

DocID024771 Rev 1 5/18
STF6N60M2, STP6N60M2, STU6N60M2 Electrical characteristics
18
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current - 4.5 A
I
SDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current (pulsed) - 18 A
V
SD
(2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage I
SD
= 4.5 A, V
GS
= 0 - 1.6 V
t
rr
Reverse recovery time
I
SD
= 4.5 A, di/dt = 100 A/µs
V
DD
= 60 V (see Figure 19)
- 274 ns
Q
rr
Reverse recovery charge - 1.47 nC
I
RRM
Reverse recovery current - 10.7 A
t
rr
Reverse recovery time
I
SD
= 4.5 A, di/dt = 100 A/µs
V
DD
= 60 V, T
j
= 150 °C
(see Figure 19)
- 376 ns
Q
rr
Reverse recovery charge - 1.96 nC
I
RRM
Reverse recovery current - 10.5 A