Datasheet

This is information on a product in full production.
February 2015 DocID025105 Rev 3 1/23
STD4N80K5, STF4N80K5,
STP4N80K5, STU4N80K5
N-channel 800 V, 2.1 typ., 3 A MDmesh™ K5 Power MOSFETs
in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
Industry’s lowest R
DS(on)
x area
Industry’s best figure of merit (FoM)
Ultra low gate charge
100% avalanche tested
Zener-protected
Applications
Switching applications
Description
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
TO-220
TO-220FP
DPAK
1
3
TA B
1
2
3
1
2
3
TAB
3
2
1
TAB
IPAK
'7$%
*
6
AM01476v1
Order code V
DS
R
DS(on)
max. I
D
P
TOT
STD4N80K5
800 V 2.5 3 A
60 W
STF4N80K5 20 W
STP4N80K5
60 W
STU4N80K5
Table 1. Device summary
Order code Marking Packages Packaging
STD4N80K5
4N80K5
DPAK Tape and reel
STF4N80K5 TO-220FP
TubeSTP4N80K5 TO-220
STU4N80K5 IPAK
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Summary of content (23 pages)