Datasheet

DocID025265 Rev 1 5/21
STD25N10F7, STF25N10F7, STP25N10F7 Electrical characteristics
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Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
DD
= 50 V, I
D
= 12.5 A,
R
G
= 4.7 Ω, V
GS
= 10 V
Figure 17
-9.8 - ns
t
r
Rise time - 14 - ns
t
d(off)
Turn-off delay time - 14.8 - ns
t
f
Fall time - 4.6 - ns
Table 7. Source-drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current - 25 A
I
SDM
(1)
1. Pulse width limited by safe operating area.
Source-drain current (pulsed) - 100 A
V
SD
(2)
2. Pulsed: pulse duration = 300 μs, duty cycle 1.5%.
Forward on voltage I
SD
= 25 A, V
GS
= 0 - 1.1 V
t
rr
Reverse recovery time
I
SD
= 25 A,
di/dt = 100 A/μs,
V
DD
= 80 V, T
j
= 150 °C
-38 ns
Q
rr
Reverse recovery charge - 29 nC
I
RRM
Reverse recovery current - 1.7 A