Datasheet
This is information on a product in full production.
February 2014 DocID024729 Rev 3 1/13
13
STF18N60M2
N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus™ low Q
g
Power MOSFET in a TO-220FP package
Datasheet
−
production data
Figure 1. Internal schematic diagram
Features
• Extremely low gate charge
• Lower R
DS(on)
x area vs previous generation
• Low gate input resistance
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• LLC converters, resonant converters
Description
This device is an N-channel Power MOSFET
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q
g
. This
revolutionary Power MOSFET associates a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
AM15572v1
TO-220FP
1
2
3
Order code V
DS
@ T
Jmax
R
DS(on)
max I
D
STF18N60M2 650 V 0.28 Ω 13 A
Table 1. Device summary
Order code Marking Package Packaging
STF18N60M2 18N60M2 TO-220FP Tube
www.st.com