Datasheet

DocID024058 Rev 2 7/16
STF110N10F7, STP110N10F7 Electrical characteristics
Figure 8. Gate charge vs gate-source voltage Figure 9. Static drain-source on-resistance for
TO-220FP
V GS
6
4
2
0
0
Q
g (nC)
(V)
40
8
20
10
V DD =50V
I
D =110A
12
60
80
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R DS(on)
5.10
5.05
5.00
4.95
5
15
I
D (A)
(mΩ)
25
35
5.15
5.20
V GS =10V
5.25
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Figure 10. Static drain-source on-resistance for
TO-220
Figure 11. Capacitance variations
Figure 12. Normalized gate threshold voltage vs
temperature
Figure 13. Normalized on-resistance vs
temperature
R DS(on)
5.2
5.1
5.0
4.9
0
20
I
D (A)
(mΩ)
40
60
5.3
V GS =10V
80
100
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C
3000
2000
1000
0
0
20
V
DS (V)
(pF)
10
4000
30
Ciss
Coss
Crss
40
50 60
70
80
5000
6000
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V GS(th)
0.7
0.6
0.5
0.4
-75
0
T
J (°C)
(norm)
-50
0.8
75
25
50
I
D =250µA
-25
125
150
0.9
1
1.1
1.2
100
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R DS(on)
1.6
1.4
0.8
0.4
T
J (°C)
(norm)
0.6
1.2
1
1.8
I D =55A
-75
0
-50
75
25
50
-25
125
150
2
100
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