Datasheet

Electrical characteristics STF110N10F7, STP110N10F7
4/16 DocID024058 Rev 2
2 Electrical characteristics
(T
CASE
=25 °C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage (V
GS
= 0)
I
D
= 250 µA 100 - V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= 100 V 1 µA
V
DS
= 100 V; T
C
=125 °C 10 µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= 20 V 100 nA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2.5 4.5 V
R
DS(on)
Static drain-source on-
resistance
For TO-220FP:
V
GS
= 10 V, I
D
= 22.5 A
5.1 7 mΩ
For TO-220:
V
GS
= 10 V, I
D
= 55 A
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
=50 V, f=1 MHz,
V
GS
=0
-5117 - pF
C
oss
Output capacitance - 992 - pF
C
rss
Reverse transfer
capacitance
-39 - pF
Q
g
Total gate charge
V
DD
=50 V, I
D
= 110 A
V
GS
=10 V
Figure 17
-72 -nC
Q
gs
Gate-source charge - 31 - nC
Q
gd
Gate-drain charge - 16 - nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
Turn-on delay time
V
DD
=50 V, I
D
= 55 A,
R
G
=4.7 Ω, V
GS
= 10 V
Figure 16
-25 - ns
t
r
Rise time - 36 - ns
t
d(off)
Turn-off delay time - 52 - ns
t
f
Fall time - 21 - ns