Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsFETsSTF110N10F7, MOSFET

This is information on a product in full production.

July 2013 DocID024058 Rev 2 1/16

STF110N10F7,

STP110N10F7

N-channel 100 V, 5.1 mΩ typ., 110 A, STripFET™ VII DeepGATE™

Power MOSFETs in TO-220FP and TO-220 packages

Datasheet

production data

Figure 1. Internal schematic diagram

Features

• Ultra low on-resistance

• 100% avalanche tested

Applications

• Switching applications

Description

These devices utilize the 7

generation of design

rules of ST’s proprietary STripFET™ technology,

with a new gate structure. The resulting Power

MOSFET exhibits the lowest R

DS(on)

in all

packages.

TO-220

TO-220FP

TAB

$0Y

'7$%

*

6

Order codes V

DS(on)

max I

TOT

STF110N10F7

100 V 0.007 Ω

45 A 30 W

STP110N10F7 110 A 150 W

Table 1. Device summary

Order codes Marking Package Packaging

STF110N10F7

110N10F7

TO-220FP

Tube

STP110N10F7 TO-220

www.st.com

Summary of content (16 pages)

PAGE 1
STF110N10F7, STP110N10F7 N-channel 100 V, 5.1 mΩ typ., 110 A, STripFET™ VII DeepGATE™ Power MOSFETs in TO-220FP and TO-220 packages Datasheet - production data Features Order codes VDS RDS(on) max 100 V 0.007 Ω STF110N10F7 TAB STP110N10F7 1 2 3 1 TO-220FP 2 ID PTOT 45 A 30 W 110 A 150 W • Ultra low on-resistance 3 • 100% avalanche tested TO-220 Applications • Switching applications Figure 1.
PAGE 2
Contents STF110N10F7, STP110N10F7 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PAGE 3
STF110N10F7, STP110N10F7 1 Electrical ratings Electrical ratings Table 2.
PAGE 4
Electrical characteristics 2 STF110N10F7, STP110N10F7 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage (VGS= 0) Max. Unit - V VDS = 100 V 1 µA VDS = 100 V; TC=125 °C 10 µA 100 nA 4.5 V 5.1 7 mΩ Min. Typ. Max. Unit - 5117 - pF - 992 - pF - 39 - pF - 72 - nC - 31 - nC - 16 - nC Min. Typ. Max.
PAGE 5
STF110N10F7, STP110N10F7 Electrical characteristics Table 7. Source drain diode Symbol ISD ISDM(1) VSD(2) Parameter Test conditions Min Typ. Max. Unit Source-drain current: For TO-220FP - 45 A For TO-220 - 110 A Source-drain current (pulsed): For TO-220FP - 180 A For TO-220 - 415 A - 1.2 V For TO-220FP: ISD = 22.
PAGE 6
Electrical characteristics 2.1 STF110N10F7, STP110N10F7 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP AM15957v1 ID (A) Figure 3. Thermal impedance for TO-220FP Zth_TOFPDEF K δ=0.5 Tj=175°C Tc=25°C Single pulse 0.05 0.02 0.01 100 10 -2 s ai are n) his RDS(o t n n i max tio ra d by e Op ite Lim 10 100µs 1ms 1 10 -3 Single pulse 10ms 0.1 10 1 0.1 VDS(V) Figure 4.
PAGE 7
STF110N10F7, STP110N10F7 Electrical characteristics Figure 8. Gate charge vs gate-source voltage AM15950v1 VGS (V) VDD=50V ID=110A 12 Figure 9. Static drain-source on-resistance for TO-220FP AM15959v1 RDS(on) (mΩ) 5.25 10 5.20 8 5.15 6 5.10 4 5.05 2 5.00 VGS=10V 4.95 0 0 40 20 60 80 Qg(nC) Figure 10. Static drain-source on-resistance for TO-220 AM15960v1 RDS(on) (mΩ) 15 25 35 ID(A) Figure 11. Capacitance variations AM15952v1 C (pF) 6000 VGS=10V 5.3 5 Ciss 5000 5.
PAGE 8
Electrical characteristics STF110N10F7, STP110N10F7 Figure 14. Normalized BVDSS vs temperature AM15955v1 V(BR)DSS (norm) Figure 15. Source-drain diode forward vs temperature AM15956v1 VSD (V) ID=250µA TJ=-55°C 1.1 1.04 1 1.02 0.9 1.00 TJ=25°C 0.8 0.98 0.7 TJ=175°C 0.96 0.94 -75 -50 -25 0 8/16 0.6 25 50 75 100 125 150 TJ(°C) 0.
PAGE 9
STF110N10F7, STP110N10F7 3 Test circuits Test circuits Figure 16. Switching times test circuit for resistive load Figure 17. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 18. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 19. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.
PAGE 10
Package mechanical data 4 STF110N10F7, STP110N10F7 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
PAGE 11
STF110N10F7, STP110N10F7 Package mechanical data Table 8. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.
PAGE 12
Package mechanical data STF110N10F7, STP110N10F7 Figure 22.
PAGE 13
STF110N10F7, STP110N10F7 Package mechanical data Table 9. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.
PAGE 14
Package mechanical data STF110N10F7, STP110N10F7 Figure 23.
PAGE 15
STF110N10F7, STP110N10F7 5 Revision history Revision history Table 10. Document revision history Date Revision 03-Dec-2012 1 Initial release.
PAGE 16
STF110N10F7, STP110N10F7 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.