Datasheet
DocID024712 Rev 3 7/14
STF10N60M2, STFI10N60M2 Electrical characteristics
Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs.
temperature
Figure 10. Normalized on-resistance vs
temperature
Figure 11. Source-drain diode forward
characteristics
C
10
1
0.1
0.1
10
V
DS
(V)
(pF)
1
100
Ciss
Coss
Crss
100
1000
AM15827v1
V
GS(th)
0.8
0.7
T
J
(°C)
(norm)
-50
0.9
-25
50
100
0
25
75
125
1.0
1.1
ID=250 µA
AM15828v1
R
DS(on)
1.3
1.1
0.9
0.7
T
J
(°C)
(norm)
0.5
-50
-25
0
25
I
D
=3 A
50
75
100
125
1.5
1.7
1.9
2.1
2.3
2.5
AM15829v1
V
SD
0
2
I
SD
(A)
(V)
1
5
3
4
0
0.2
0.4
0.6
T
J
=-50°C
T
J
=150°C
T
J
=25°C
0.8
6
7
1
1.2
1.4
AM15830v1
Figure 12. Normalized V
DS
vs temperature Figure 13. Output capacitance stored energy
V
DS
0.99
0.97
0.95
0.93
T
J
(°C)
(norm)
-50
1.01
I
D
=1mA
-25
50
100
1.03
0
25
75
125
1.05
1.07
1.09
1.11
AM15831v1
Eoss
0
V
DS(V)
(µJ)
200
100
500
0
1
2
3
300
400
600
AM15832v1