Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsFETsSTF10N60M2, MOSFET

This is information on a product in full production.

December 2013 DocID024712 Rev 3 1/14

STF10N60M2, STFI10N60M2

N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Q

Power MOSFETs in TO-220FP and I²PAKFP packages

Datasheet

−

production data

Figure 1. Internal schematic diagram

Features

• Extremely low gate charge

• Lower R

DS(on)

x area vs previous generation

• Low gate input resistance

• 100% avalanche tested

• Zener-protected

Applications

• Switching applications

Description

These devices are N-channel Power MOSFETs

developed using a new generation of MDmesh™

technology: MDmesh II Plus™ low Q

. These

revolutionary Power MOSFETs associate a

vertical structure to the company's strip layout to

yield one of the world's lowest on-resistance and

gate charge. They are therefore suitable for the

most demanding high efficiency converters.

AM15572v1

TO-220FP

I PAKFP

Order codes V

@ T

Jmax

DS(on)

max

STF10N60M2

650 V 0.6 Ω 7.5 A

STFI10N60M2

Table 1. Device summary

Order codes Marking Package Packaging

STF10N60M2

10N60M2

TO-220FP

Tube

STFI10N60M2 I

PAKFP (TO281)

www.st.com

Summary of content (14 pages)

PAGE 1
STF10N60M2, STFI10N60M2 N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus™ low Qg Power MOSFETs in TO-220FP and I²PAKFP packages Datasheet − production data Features Order codes VDS @ TJmax RDS(on) max ID 650 V 0.6 Ω 7.5 A STF10N60M2 STFI10N60M2 • Extremely low gate charge • Lower RDS(on) x area vs previous generation 3 1 2 1 TO-220FP 2 3 • Low gate input resistance I 2 PAKFP • 100% avalanche tested • Zener-protected Applications Figure 1.
PAGE 2
Contents STF10N60M2, STFI10N60M2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
PAGE 3
STF10N60M2, STFI10N60M2 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Value Unit ± 25 V (1) A Drain current (continuous) at TC = 100 °C (1) 4.9 A IDM (1) Drain current (pulsed) 30(1) A PTOT W VGS ID Parameter Gate-source voltage Drain current (continuous) at TC = 25 °C ID 7.
PAGE 4
Electrical characteristics 2 STF10N60M2, STFI10N60M2 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 600 V IDSS Zero gate voltage VDS = 600 V drain current (VGS = 0) VDS = 600 V, TC=125 °C 1 100 μA μA IGSS Gate-body leakage current (VDS = 0) ±10 μA 3 4 V 0.550 0.6 Ω Min. Typ. Max. Unit - 400 - pF - 22 - pF - 0.
PAGE 5
STF10N60M2, STFI10N60M2 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 7.5 A ISDM (1) Source-drain current (pulsed) - 30 A VSD (2) Forward on voltage - 1.6 V ISD trr ISD = 7.5 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 7.
PAGE 6
Electrical characteristics 2.1 STF10N60M2, STFI10N60M2 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance AM15822v1 ID (A) 10 s ai re n) si a DS(o th R in ax n it o y m b a er ed Op mit i L 1 10µs 100µs 1ms 10ms Tj=150°C Tc=25°C 0.1 Single pulse 0.01 10 1 0.1 100 VDS(V) Figure 4. Output characteristics Figure 5.
PAGE 7
STF10N60M2, STFI10N60M2 Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs. temperature AM15827v1 C (pF) AM15828v1 VGS(th) (norm) ID=250 µA 1000 1.1 Ciss 100 1.0 Coss 10 Crss 1 0.1 0.1 1 100 10 VDS(V) Figure 10. Normalized on-resistance vs temperature 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 TJ(°C) Figure 11. Source-drain diode forward characteristics AM15829v1 RDS(on) AM15830v1 VSD (V) (norm) ID=3 A 2.5 1.4 2.3 2.1 1.
PAGE 8
Test circuits 3 STF10N60M2, STFI10N60M2 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 16. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 17. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.
PAGE 9
STF10N60M2, STFI10N60M2 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark.
PAGE 10
Package mechanical data STF10N60M2, STFI10N60M2 Table 9. TO-220FP mechanical data mm Dim. Min. Typ. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 10/14 Max. 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.
PAGE 11
STF10N60M2, STFI10N60M2 Package mechanical data Figure 20.
PAGE 12
Package mechanical data STF10N60M2, STFI10N60M2 Table 10. I2PAKFP (TO-281) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 B 2.50 2.70 D 2.50 2.75 D1 0.65 0.85 E 0.45 0.70 F 0.75 1.00 F1 1.20 G 4.95 H 10.00 10.40 L1 21.00 23.00 L2 13.20 14.10 L3 10.55 10.85 L4 2.70 3.20 L5 0.85 1.25 L6 7.30 7.50 - 5.20 Figure 21.
PAGE 13
STF10N60M2, STFI10N60M2 5 Revision history Revision history Table 11. Document revision history Date Revision 29-May-2013 1 First release.
PAGE 14
STF10N60M2, STFI10N60M2 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.