Datasheet

Electrical characteristics HVLED805
6/29 Doc ID 18077 Rev 1
V
DMGH
Upper clamp voltage I
DMG
= 1 mA 3.0 3.3 3.6 V
V
DMGL
Lower clamp voltage I
DMG
= - 1 mA -90 -60 -30 mV
V
DMGA
Arming voltage positive-going edge 100 110 120 mV
V
DMGT
Triggering voltage negative-going edge 50 60 70 mV
I
DMGON
Min. source current during MOSFET ON-time -25 -50 -75 µA
T
BLANK
Trigger blanking time after MOSFET’s turn-off
V
COMP
≥ 1.3V 6
µs
V
COMP
= 0.9V 30
Line feedforward
R
FF
Equivalent feedforward resistor I
DMG
= 1mA 45 Ω
Transconductance error amplifier
V
REF
Voltage reference
Tj = 25 °C
(1)
2.45 2.51 2.57
V
Tj = -25 to 125°C and
Vcc=12V to 23V
(1)
2.4 2.6
gm Transconductance
ΔI
COMP
= ±10 µA
V
COMP
= 1.65 V
1.3 2.2 3.2 mS
Gv Voltage gain Open loop 73 dB
GB Gain-bandwidth product 500 kHz
I
COMP
Source current V
DMG
= 2.3V, V
COMP
= 1.65V 70 100 µA
Sink current V
DMG
= 2.7V, V
COMP
= 1.65V 400 750 µA
V
COMPH
Upper COMP voltage V
DMG
= 2.3V 2.7 V
V
COMPL
Lower COMP voltage V
DMG
= 2.7V 0.7 V
V
COMPBM
Burst-mode threshold 1 V
Hys Burst-mode hysteresis 65 mV
Current reference
V
ILEDx
Maximum value V
COMP
= V
COMPL
(1)
1.5 1.6 1.7 V
V
CLED
Current reference voltage 0.192 0.2 0.208 V
Current sense
t
LEB
Leading-edge blanking 200 250 300 ns
t
d(H-L) Delay-to-output 300 ns
V
CSx
Max. clamp value
(1)
dVcs/dt = 200 mV/µs 0.7 0.75 0.8 V
V
CSdis
Hiccup-mode OCP level
(1)
0.92 1 1.08 V
1. Parameters tracking each other
Table 4. Electrical characteristics (continued)
Symbol Parameter Test condition Min. Typ. Max. Unit