Datasheet

Electrical characteristics STEF12
6/20 Doc ID 019056 Rev 5
4 Electrical characteristics
V
CC
= 12 V, V
EN
= 3.3 V, C
I
= 10 µF, C
O
= 47 µF, T
J
= 25 °C (unless otherwise specified).
Table 6. Electrical characteristics for STEF12
Symbol Parameter Test Conditions Min. Typ. Max. Unit
Under/Overvoltage protection
V
Clamp
Output clamping voltage V
CC
= 18 V 13.8 15 16.2 V
V
UVLO
Undervoltage lockout Turn-on, voltage rising 7.7 8.5 9.3 V
V
Hyst
UVLO hysteresis 0.80 V
Power MOSFET
t
dly
Delay time
Enabling of chip to I
D
= 100 mA
with a 1 A resistive load
350 µs
R
DSon
On-resistance
(1)
35 53 70
mΩ
- 40 °C < T
J
< 125 °C
(2)
82
V
OFF
Off state output voltage V
CC
= 18 V, V
GS
= 0, R
L
= infinite 40 100 mV
I
D
Continuous current
0.5in
2
pad, T
A
= 25 °C
(1)
3.6
A
Minimum copper, T
A
= 80 °C 1.7
Current limit
I
Short
Short-circuit current limit R
Limit
= 22 Ω 3.3 4.4 5.5 A
I
Lim
Overload current limit R
Limit
= 22 Ω 4.4 A
dv/dt circuit
dv/dt Output voltage ramp time
Enable to V
OUT
= 11.7 V, No
C
dv/dt
0.5 0.9 2.6 ms
Enable/Fault
V
IL
Low level input voltage Output disabled 0.35 0.58 0.81 V
V
I(INT)
Intermediate level input voltage Thermal fault, output disabled 0.82 1.4 1.95 V
V
IH
High level input voltage Output enabled 1.96 2.64 3.3 V
V
I(MAX)
High state maximum voltage 3.4 4.3 5.4 V
I
IL
Low level input current (sink) V
Enable
= 0 V -10 -30 µA
I
I
High level leakage current for
external switch
V
Enable
= 3.3 V 1 µA
Maximum fan-out for fault signal
Total numbers of chips that can
be connected to this pin for
simultaneous shutdown
3Units
Total device
I
Bias
Bias current
Device operational 1.5 2
mA
Thermal shutdown 1