Datasheet

3/13
STP5NK40Z - STP5NK40ZFP - STD5NK40Z - STD5NK40Z-1
ELECTRICAL CHARACTERISTICS (T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
ON/OFF
DYNAMIC
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Symbol Parameter Test Conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
=1 mA, V
GS
= 0 400 V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
=0)
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125 °C
1
50
µA
µA
I
GSS
Gate-body Leakage
Current (V
DS
=0)
V
GS
= ± 20V ±10 µA
V
GS(th)
Gate Threshold Voltage
V
DS
=V
GS
,I
D
= 50µA
3 3.75 4.5 V
R
DS(on)
Static Drain-source On
Resistance
V
GS
=10V,I
D
= 1.5 A 1.47 1.8 Ω
Symbol Parameter Test Conditions Min. Typ. Max. Unit
g
fs
(1) Forward Transconductance V
DS
=15 V
,
I
D
= 1.5 A 2.2 S
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
=25V,f=1MHz,V
GS
= 0 305
57
11.5
pF
pF
pF
C
oss eq.
(3) Equivalent Output
Capacitance
V
GS
=0V,V
DS
= 0V to 400V 44 pF
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
=200V,I
D
= 1.5 A
R
G
= 4.7Ω V
GS
=10V
(Resistive Load see, Figure 3)
9.2
6
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
=320V,I
D
=3A,
V
GS
=10V
11.7
2.8
5.8
17 nC
nC
nC
Symbol Parameter Test Conditions Min. Typ. Max. Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 200 V, I
D
= 1.5A
R
G
=4.7ΩV
GS
=10V
(Resistive Load see, Figure 3)
22.5
11
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 320V, I
D
=3A,
R
G
=4.7Ω, V
GS
= 10V
(Inductive Load see, Figure 5)
8.5
7.5
14.5
ns
ns
ns
Symbol Parameter Test Conditions Min. Typ. Max. Unit
I
SD
I
SDM
(2)
Source-drain Current
Source-drain Current (pulsed)
3
12
A
A
V
SD
(1)
Forward On Voltage
I
SD
= 3 A, V
GS
=0
1.6 V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 3 A, di/dt = 100A/µs
V
DD
=40V,T
j
= 150°C
(see test circuit, Figure 5)
145
464
6.4
ns
nC
A