Datasheet

ManualsBrandsSTMICROELECTRONICS ManualsPMICsPMIC - power management - special purpose 170 µA TDFN 10 (2.5x2)

September 2009 Doc ID15492 Rev 5 1/36

STBP120

Overvoltage protection device with thermal shutdown

Features

■ Input overvoltage protection up to 28 V

■ Integrated high voltage N-channel MOSFET

switch

■ Low R

DS(on)

of 90 mΩ

■ Integrated charge pump

■ Thermal shutdown protection

■ Softstart feature to control the inrush current

■ Enable input (EN)

■ Fault indication output (FLT)

■ IN input ESD withstand voltage up to ±15 kV

(air discharge), up to ±8 kV (contact discharge)

in typical application circuit with 1µF input

capacitor (±2 kV HBM for standalone device)

■ Certain overvoltage options compliant with the

China Communications Standard YD/T 1591-

2006 (overvoltage protection only)

■ Small, RoHS compliant 2.5 x 2 mm TDFN –

10-lead package.

Applications

■ Smart phones

■ Digital cameras

■ PDA and palmtop devices

■ MP3 players

■ Low-power handheld devices.

TDFN – 10-lead (2.5 x 2 mm)

www.st.com

Summary of content (36 pages)

PAGE 1
STBP120 Overvoltage protection device with thermal shutdown Features ■ Input overvoltage protection up to 28 V ■ Integrated high voltage N-channel MOSFET switch ■ Low RDS(on) of 90 mΩ ■ Integrated charge pump ■ Thermal shutdown protection ■ Softstart feature to control the inrush current ■ Enable input (EN) ■ Fault indication output (FLT) ■ IN input ESD withstand voltage up to ±15 kV (air discharge), up to ±8 kV (contact discharge) in typical application circuit with 1µF input capacitor (±2
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Contents STBP120 Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 2 Pin descriptions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 4 2.1 Input (IN) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.2 Power output (OUT) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 2.
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STBP120 Contents 11 Tape and reel specification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 12 Part numbering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 13 Package marking information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 34 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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List of tables STBP120 List of tables Table 1. Table 2. Table 3. Table 4. Table 5. Table 6. Table 7. Table 8. Table 9. Table 10. Table 11. Table 12. 4/36 Pin description and signal names . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Thermal data. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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STBP120 List of figures List of figures Figure 1. Figure 2. Figure 3. Figure 4. Figure 5. Figure 6. Figure 7. Figure 8. Figure 9. Figure 10. Figure 11. Figure 12. Figure 13. Figure 14. Figure 15. Figure 16. Figure 17. Figure 18. Figure 19. Figure 20. Figure 21. Figure 22. Figure 23. Figure 24. Figure 25. Figure 26. Figure 27. Figure 28. Figure 29. Figure 30. Logic diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Pinout . . .
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Description 1 STBP120 Description The STBP120 device provides overvoltage protection for input voltage up to +28 V. Its low RDS(on) N-channel MOSFET switch protects the systems connected to the OUT pin against failures of the DC power supplies in accordance with the China MII Communications Standard YD/T 1591-2006.
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STBP120 Pin descriptions 2 Pin descriptions 2.1 Input (IN) Input voltage pin. This pin is connected to the DC power supply. External low ESR ceramic capacitor of minimum value 1 µF must be connected between IN and GND. This capacitor is for decoupling and also protects the IC against dangerous voltage spikes and ESD events. This capacitor should be located as close to the IN pins as possible. All IN pins (4, 5) must be hardwired to common supply. 2.2 Power output (OUT) Output voltage pin.
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Pin descriptions 2.4 STBP120 Enable input (EN) This logical input (active-low) can be used to enable or disable the device. When EN input is driven high, the STBP120 enters the standby mode and the power output is disconnected from the input. When EN input is driven low and all operating conditions are within specified limits, the power output is connected to the input. Since the EN input has no internal pull-down resistor, its logical level must be defined by the controller or by an external resistor.
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STBP120 Figure 3. Pin descriptions Block diagram OUT IN Core negative protection ESD protection SUPPLY REGULATOR CHARGE PUMP MOSFET DRIVER OSCILLATOR OFF VCC VREF VOLTAGE REFERENCE COUNTERS Input overvoltage FLT MCU INTERFACE CONTROL LOGIC Input undervoltage EN Temperature Thermal shutdown detector ESD protection ESD protection GND AM00306 Figure 4.
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Operation 3 STBP120 Operation The STBP120 provides overvoltage protection for positive input voltage up to 28 V using a built-in low RDS(on) N-channel MOSFET switch. 3.1 Power-up At power-up, with EN = low, the MOSFET switch is turned on after a 50 ms delay, ton, after the input voltage exceeds the UVLO threshold to ensure the input voltage is stabilized. After an additional 50 ms delay, tstart, the FLT indication output is deactivated (see Figure 6).
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STBP120 3.4 Operation Overvoltage lockout (OVLO) If the input voltage VIN rises above the threshold level VOVLO, the MOSFET switch is immediately turned off (see Figure 7). At the same time, the fault indication output FLT is activated (i.e. driven low). This device is equipped with hysteresis, VHYS(OVLO), to improve noise immunity under transient conditions. For available OVLO thresholds and hystereses, please see the Table 5. 3.
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Application information STBP120 4 Application information 4.1 Calculating the power dissipation The maximum power dissipation of the STBP120 internal power MOSFET can be calculated using following formula: PD = I2 x RDS(on)(max), Where I is current flowing through the MOSFET and RDS(on)(max) is maximum value of MOSFET resistance. Example: Rload = 5 Ω, VIN = 5 V, R DS(on)(max) = 150 mΩ I = VIN / (RDS(on)(max) + R load) = 5 / (5 + 0.150) = 0.97 A PD = 0.972 x 0.15 = 0.
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STBP120 5 Maximum rating Maximum rating Stressing the device above the rating listed in the “absolute maximum ratings” table may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the operating sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
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Maximum rating STBP120 . Table 3. Thermal data Symbol Parameter RthJA Thermal resistance (junction to ambient) RthJC Thermal resistance (junction to case) Value Unit 204(1) 82(2) °C/W 43 °C/W 1. The package is mounted on a 2-layers (1S) JEDEC board as per JESD51-7 without thermal vias underneath the exposed pads. 2. The package is mounted on a 4-layers (2S2P) JEDEC board as per JESD51-7 with 2 thermal vias (one underneath each exposed pad) as per JESD-51-5.
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STBP120 6 DC and AC parameters DC and AC parameters This section summarizes the operating measurement conditions, and the DC and AC characteristics of the device. The parameters in the DC and AC characteristics tables that follow are derived from tests performed under the measurement conditions summarized in Table 4. Designers should check that the operating conditions in their circuit match the operating conditions when relying on the quoted parameters. Table 4.
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DC and AC parameters Table 5. STBP120 DC and AC characteristics (continued) Description Test condition(1) Min Typ ton Startup delay Time measured from VIN > VUVLO to VOUT = 0.3 V (see Figure 6) 30 50 70 ms tstart FLT indication delay (OK) Time measured from VOUT = 0.3 V to V(FLT) = 1.2 V (see Figure 6) 30 50 70 ms toff(2) Output turn-off time Time measured from VIN > VOVLO to VOUT ≤ 0.3 V. VIN increasing from 5.0 V to 8.0 V at 3.0 V/µs, Rload connected to OUT. (see Figure 7) 1.
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STBP120 7 Timing diagrams Timing diagrams Figure 6. Startup(1) OVLO UVLO VIN ton 0.3 V VOUT 1.2 V tstart V(FLT) AM00335 1. EN input is low. Figure 7. Overvoltage protection(1) OVLO VIN VOUT UVLO toff 0.3 V tstop 0.4 V V(FLT) AM00336 1. EN input is low.
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Timing diagrams Figure 8. STBP120 Disable (EN = high)(1) 1.2 V V(EN) OVLO VIN UVLO tdis 0.3 V VOUT AM00337 1. FLT output still indicates the VIN status. Figure 9. FLT behavior in disable (EN = high) 1.2 V V(EN) OVLO UVLO VIN equiv. to ton + tstart 1.
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STBP120 8 Typical application performance (STBP120DVDK6F) Typical application performance (STBP120DVDK6F) Figure 10. Startup delay, ton 1. No load on the output. The “leakage” on the VOUT trace is a crosstalk caused mainly by the parasitic capacitances of the MOSFET switch. Figure 11.
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Typical application performance (STBP120DVDK6F) Figure 12. Output turn-off time, toff 1. 5 Ω load on the output. Figure 13. FLT indication delay (FAULT), tstop 1. 5 Ω load on the output.
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STBP120 Typical application performance (STBP120DVDK6F) Figure 14. Disable time, tdis 1. No change in VO(FLT) status during disable. 2. 5 Ω load on the output. Figure 15. Startup to overvoltage and startup VO(FLT) delay 1. 5 Ω load on the output.
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Typical application performance (STBP120DVDK6F) STBP120 Figure 16. Startup inrush current 1. Output load 5 Ω in parallel with C = 100 µF, power supply cable inductance 1 µH, power supply cable resistance 0.3 Ω. Figure 17. Output short-circuit 1. See also details on Figure 18. 2. Power supply cable inductance 1 µH, power supply cable resistance 0.3 Ω.
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STBP120 Typical application performance (STBP120DVDK6F) Figure 18. Output short-circuit detail 1. Due to power supply cable impedance, during the output short-circuit the input voltage falls below the VUVLO threshold, resulting in turning off the power MOSFET and preventing any damage to the components. 2. Power supply cable inductance 1 µH, power supply cable resistance 0.3 Ω.
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Typical thermal characteristics (STBP120DVDK6F) 9 STBP120 Typical thermal characteristics (STBP120DVDK6F) Figure 19. ICC vs. temperature 180 170 160 150 140 ICC [µA] 130 120 110 100 90 80 –50 0 50 100 150 Temperature [˚C] AM00415 Figure 20. ICC(STDBY) vs.
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STBP120 Typical thermal characteristics (STBP120DVDK6F) Figure 21. ICC(UVLO) at 2.9 V vs. temperature 80.0 70.0 60.0 ICC(UVLO) [µA] 50.0 40.0 30.0 20.0 –50 0 50 100 150 Temperature [˚C] AM00417 Figure 22. VOVLO vs. temperature 6.3 6.2 6.1 VOVLO [V] 6 5.9 5.
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Typical thermal characteristics (STBP120DVDK6F) STBP120 Figure 23. VUVLO vs. temperature 3.4 3.35 3.3 VUVLO [V] 3.25 3.2 3.15 3.1 –50 0 50 100 150 Temperature [˚C] AM00422 Figure 24. VOL(FLT) at 1 mA vs. temperature 0.1 0.09 0.08 VOL(FLT) [V] 0.07 0.06 0.05 0.04 0.03 0.02 0.
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STBP120 Typical thermal characteristics (STBP120DVDK6F) Figure 25. RDS(on) at 1 A vs. temperature 140.0 120.0 100.0 RDS(on) [mΩ] 80.0 60.0 40.0 20.0 0.
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Package mechanical data 10 STBP120 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. Figure 26. TDFN – 10-lead, 2.5 x 2.0 x 0.75 mm body, pitch 0.50 mm, package mechanical drawing D A B INDE X AREA E 0.10 C 2x 0.10 C 2x TOP VIEW 0.
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STBP120 Package mechanical data Table 6. TDFN – 10-lead, 2.5 x 2.0 x 0.75 mm body, pitch 0.50 mm, package mechanical data dimensions(1) (mm) (inches) Symbol Note Min. Nom. Max. Min. Nom. Max. A 0.70 0.75 0.80 0.028 0.030 0.031 A1 0.00 0.02 0.05 0.000 0.001 0.002 b 0.18 0.25 0.30 0.007 0.010 0.012 D BSC 2.50 0.098 D2-1 0.53 0.68 0.78 0.021 0.027 0.031 D2-2 0.93 1.08 1.18 0.037 0.043 0.046 E BSC E2 2.00 0.75 e 0.90 0.079 1.00 0.030 0.50 L 0.20 K 0.
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Tape and reel specification 11 STBP120 Tape and reel specification Figure 27. Tape and reel P0 D P2 T E A0 F Top cover tape W B0 Center lines of cavity K0 P1 User direction of feed AM03073v2 Table 7. Tape size W D E 12 12.00 ± 0.30 1.50 +0.10 / –0.00 1.75 ± 0.10 Table 8. 30/36 Carrier tape dimensions Po P2 4.00 ± 0.10 2.00 ± 0.10 F 5.50 ± 0.05 Further tape and reel information Package code W Ao Bo 2 x 2.5mm TDFN 10 lead 12 2.30 ± 0.10 2.80 ± 0.
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STBP120 Tape and reel specification Figure 28. Reel dimensions T 40 mm min. acces hole at slot location B D C N A Full radius Tape slot in core for tape start 25 mm min width G measured at hub AM00443 Table 9. Reel dimensions Tape size A max. B min. C D min. N min. G T max. 12 mm 330 (13 inch) 1.5 13 ± 0.2 20.2 60 12.4 + 2 / – 0 18.
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Tape and reel specification STBP120 Figure 29. Tape trailer/leader End Top cover tape Start No components Components 100 mm min. T RA IL ER No components L EA D ER 160 mm min. 400 mm min. Sealed with cover tape User direction of feed AM00444 Figure 30. Pin 1 orientation Direction of feed Note: 32/36 1 Drawings are not to scale. 2 All dimensions are in mm, unless otherwise noted.
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STBP120 12 Part numbering Part numbering Table 10. Ordering information scheme STBP120 D V DK 6 F Device type STBP120 Overvoltage threshold A = 5.375 V B = 5.50 V C = 5.90 V D = 6.02 V Undervoltage threshold V = 3.25 V Package DK = TDFN – 10-lead, 2.5 x 2 mm Temperature range 6 = –40 °C to +85 °C Shipping method F = ECOPACK® package, tape and reel Note: Other overvoltage thresholds are offered. Minimum order quantities may apply. Contact local sales office for availability.
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Package marking information 13 STBP120 Package marking information Table 11. Marking description Part number(1) Overvoltage threshold (V) Topside marking STBP120AVxxxx 5.375 P12A STBP120BVxxxx 5.50 P12B STBP120CVxxxx 5.90 P12C STBP120DVxxxx 6.02 P12D 1. Other overvoltage thresholds are offered. Minimum order quantities may apply. Contact local sales office for availability.
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STBP120 14 Revision history Revision history Table 12. Document revision history Date Revision Changes 20-Mar-2009 1 Initial release. 07-Apr-2009 2 Updated Section 2, Section 3, Figure 5, ton and tstart in Table 5 and shipping method in Table 10, added Section 8 and Section 9. 29-Apr- 2009 3 Updated the revision history table - removed the draft revisions. 01-Jun-2009 4 Updated Features, Section 4.
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STBP120 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale.