Datasheet

STA559BW Electrical specifications
Doc ID 18190 Rev 1 13/67
3.5 Electrical specifications for the power section
The specifications given in this section are valid for the operating conditions: V
CC
=5V,
f=1kHz, f
sw
= 384 kHz, T
amb
= 25 °C and R
L
= 4 Ω, unless otherwise specified.
Table 7. Electrical specifications - power section
Symbol Parameter Conditions Min Typ Max Unit
Po
Output power BTL
THD = 1%R
L
= 2 Ω -4.2-
W
THD = 10%R
L
= 2 Ω -5.3-
Output power SE
THD = 1%,R
L
= 2 Ω -1-
W
THD = 10%,R
L
= 2 Ω -1.3-
R
dsON
Power P-channel or N-channel MOSFET l
d
= 0.75 A - - 250 mΩ
gP Power P-channel RdsON matching l
d
= 0.75 A - 100 - %
gN Power N-channel RdsON matching l
d
= 0.75 A - 100 - %
Idss Power P-channel/N-channel leakage Vcc=9V - - 1 µA
t
r
Rise time
Resistive load,
see Figure 3 below
- - 10 ns
t
f
Fall time - - 10 ns
I
VCC
Supply current from V
CC
in power down PWRDN = 0 - 0.3 - µA
Supply current from V
CC
in operation PWRDN = 1 - 15 - mA
I
VDD
Supply current FFX processing
Internal clock =
49.152 MHz
-55-mA
I
LIM
Overcurrent limit
(1)
2.2 3.0 - A
I
SCP
Short -circuit protection R
L
= 0 Ω 2.7 3.6 - A
V
UVP
Undervoltage protection - - - 4.3 V
t
min
Output minimum pulse width No load 20 40 60 ns
DR Dynamic range - - 100 - dB
SNR
Signal to noise ratio, ternary mode A-Weighted - 100 - dB
Signal to noise ratio binary mode - - 90 - dB
THD+N Total harmonic distortion + noise
FFX stereo mode,
Po = 1 W
f=1kHz
-0.2-%
X
TAL K
Crosstalk
FFX stereo mode,
<5 kHz
One channel driven
at 1 W, other channel
measured
-80-dB
η
Peak efficiency, FFX mode
Po = 2 x 20 W
into 8 Ω
-90-
%
Peak efficiency, binary modes
Po = 2 x 9 W into 4 Ω
+ 1 x 20 W into 8 Ω
-87-
1. Limit the current if overcurrent warning detect adjustment bypass is enabled (register bit CONFC.OCRB on
page 28). When disabled refer to I
SCP
.