Datasheet

Electrical characteristics STA516B
6/18 DocID13183 Rev 5
Unless otherwise stated, the test conditions for Table 6 below are V
L
= 3.3 V, V
CC
= 50 V
and T
amb
= 25 °C
Table 6. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
R
dsON
Power P-channel/N-channel
MOSFET R
dsON
I
dd
= 1 A - 200 240 m
I
dss
Power P-channel/N-channel
leakage Idss
- --50µA
g
N
Power P-channel R
dsON
matching
I
dd
= 1 A 95--%
g
P
Power N-channel R
dsON
matching
I
dd
= 1 A 95--%
Dt_s Low current dead time (static) see Figure 3 - 1020ns
Dt_d
High current dead time
(dynamic)
L = 22 µH, C = 470 nF
R
L
= 8 , I
dd
= 4.5 A
see Figure 4
--50ns
t
d ON
Turn-on delay time Resistive load - - 100 ns
t
d OFF
Turn-off delay time Resistive load - - 100 ns
t
r
Rise time
Resistive load
see Figure 3
--25ns
t
f
Fall time
Resistive load
see Figure 3
--25ns
V
IN-High
High level input voltage - - -
V
L
/ 2 +
300 mV
V
V
IN-Low
Low level input voltage -
V
L
/ 2 -
300 mV
--V
I
IN-H
High level input current V
IN
= V
L
-1-µA
I
IN-L
Low level input current V
IN
= 0.3V -1 -µA
I
PWRDN-H
High level PWRDN pin input
current
V
L
= 3.3 V - 35 - µA
V
Low
Low logical state voltage
(pins PWRDN, TRISTATE)
(seeTable 7)
V
L
= 3.3 V 0.8 - V
V
High
High logical state voltage
(pins PWRDN, TRISTATE)
(seeTable 7)
V
L
= 3.3 V - 1.7 V
I
VCC-
PWRDN
Supply current from V
CC
in
power down
V
PWRDN
= 0 V --2.4mA
I
FAULT
Output current on pins
FAULT, TH_WARN with fault
condition
V
pin
= 3.3V -1-mA
I
VCC-HiZ
Supply current from V
CC
in
tristate
V
TRISTATE
= 0 V - 22 - mA