Datasheet

STA508
4/10
Table 5. ABSOLUTE MAXIMUM RATINGS
Table 6. ELECTRICAL CHARACTERISTCS (V
L
= 3.3V; V
CC
= 30V; T
amb
= 25°C ; f
sw
=384 unless
otherwise specified)
Symbol Parameter Value Unit
V
CC
DC Supply Voltage (Pin 4,7,12,15) 40 V
V
max
Maximum Voltage on pins 23 to 32 5.5 V
P
tot
Power Dissipation (T
case
= 70°C) 50 W
T
op
Operating Temperature Range -40 to 90 °C
T
stg
, T
j
Storage and Junction Temperature -40 to 150 °C
Symbol Parameter Test conditions Min. Typ. Max. Unit
R
dsON
Power Pchannel/Nchannel
MOSFET RdsON
Id=1A 200 270 mΩ
I
dss
Power Pchannel/Nchannel
leakage Idss
V
CC
=35V 50 µA
g
N
Power Pchannel RdsON Matching Id=1A 95 %
g
P
Power Nchannel RdsON
Matching
Id=1A 95 %
Dt_s Low current Dead Time (static) see test circuit no.1; see fig. 4 10 20 ns
Dt_d High current Dead Time (dinamic) L=22µH; C = 470nF; R
L
= 8 Ω
Id=3.5A; see fig. 3
50 ns
t
d ON
Turn-on delay time Resistive load 100 ns
t
d OFF
Turn-off delay time Resistive load 100 ns
t
r
Rise time Resistive load; as fig.4 25 ns
t
f
Fall time Resistive load; as fig. 4 25 ns
V
CC
Supply voltage operating voltage 10 36 V
V
IN-High
High level input voltage V
L
/2
+300mV
V
V
IN-Low
Low level input voltage V
L
/2 -
300mV
V
I
IN-High
High level Input current Pin Voltage = V
L
1 µA
I
IN-Low
Low level input current Pin Voltage = 0.3V 1 µA
I
PWRDN-H
High level PWRDN pin input
current
V
L
= 3.3V 35 µA
V
L
Low logical state voltage VL (pin
PWRDN, TRISTATE) (note 1)
V
L
= 3.3V 0.8 V