Datasheet

Electrical specification STA333W
12/49 Doc ID 13365 Rev 2
3.3 Electrical specifications - digital section
3.4 Electrical specifications - power section
The specifications in Tabl e 7 below are given for the conditions V
CC
= 18 V, V
DD
= 3.3 V,
f
SW
= 384 kHz, T
amb
= 25 °C and R
L
= 8 Ω, unless otherwise specified.
Table 6. Electrical characteristics for digital section
Symbol Parameter Conditions Min Typ Max Unit
I
il
Input current, no pull-up or
pull-down resistor
V
i
= 0 V - - ±10 µA
I
ih
V
i
= V
DD
= 3.6 V - - ±10 µA
V
il
Low-level input voltage - - -
0.2 *
V
DD
V
V
ih
High-level input voltage -
0.8 *
V
DD
--V
V
ol
Low-level output voltage I
ol
= 2 mA - -
0.4 *
V
DD
V
V
oh
High-level output voltage I
oh
= 2 mA
0.8 *
V
DD
--V
I
pu
Pull-up current - 25 66 125 µA
R
pu
Equivalent pull-up
resistance
--50-kΩ
Table 7. Electrical specifications for power section
Symbol Parameter Conditions Min Typ Max Unit
Po Output power BTL
THD = 1% - 16 -
W
THD = 10% - 20 -
R
dsON
Power P-channel/N-channel
MOSFET (total bridge)
ld = 1 A - 180 250 mΩ
l
dss
Power P-channel/N-channel
leakage
V
CC
= 18 V --10µA
gP
Power P-channel R
dsON
matching
ld = 1 A 95--%
gN
Power N-channel R
dsON
matching
ld = 1 A 95--%
I
LDT
Low-current dead time
(static)
Resistive load,
refer to Figure 5
- 5 10 ns
I
HDT
High-current dead time
(dynamic)
Refer to Figure 6 - 1020ns
t
r
Rise time
Resistive load,
refer to Figure 5
- 8 10 ns
t
f
Fall time
Resistive load,
refer to Figure 5
- 8 10 ns