Datasheet

STA333ML Electrical specifications
Doc ID 13177 Rev 6 7/21
3.4 Electrical specifications - digital section
Table 6. Electrical specifications for digital section
3.5 Electrical specifications - power section
The specifications given here are with the operating conditions: V
CC
= 18 V, V
DD
= 3.3 V,
f
sw
= 384 kHz, T
amb
= 25 °C, R
L
=8Ω unless otherwise specified
Symbol Parameter Conditions Min Typ Max Unit
I
il
Input current without bias
device
V
i
= 0 V -10 - 10 µA
I
ih
V
i
= V
DD
= 3.6 V -10 - 10 µA
V
il
Low-level input voltage - - -
0.2 *
V
DD
V
V
ih
High-level input voltage -
0.8 *
V
DD
--V
V
ol
Low-level output voltage I
ol
= 2 mA - -
0.4 *
V
DD
V
V
oh
High-level output voltage I
oh
= 2 mA
0.8 *
V
DD
--V
I
pu
Pull-up/down current - -25 66 125 µA
R
pu
Equivalent pull-up/down
resistance
--50-kΩ
Table 7. Electrical specifications for power section
Symbol Parameter Conditions Min Typ Max Unit
Po Output power BTL
THD = 1% - 16 -
W
THD = 10% - 20 -
R
dsON
On resistance of power
P-channel/N-channel
MOSFET (total bridge)
l
d
= 1 A - 180 250 mΩ
l
dss
Power
P-channel/N-channel
leakage current
- --10μA
gP
Power P-channel
R
dsON
matching
l
d
= 1 A 95--%
gN
Power N-channel
R
dsON
matching
l
d
= 1 A 95--%
I
LDT
Low current dead time
(static)
Resistive load Figure 4 - 5 10 ns
I
HDT
High current dead time
(dynamic)
Load = 1.5 A (Figure 5) - 10 20 ns
t
r
Rise time Resistive load Figure 4 - 8 10 ns
t
f
Fall time Resistive load Figure 4 - 8 10 ns