Datasheet

Electrical characteristics ST8024L
12/35 Doc ID 17709 Rev 5
|I
CC
| Card supply current
V
CC
= 0 to 5 V 80
mA
V
CC
= 0 to 3 V 65
V
CC
= 0 to 1.8 V 45
V
CC
short-circuit to GND 90 120
S
R
Slew rate
Slew up or down, V
CC
= 5 V; 3 V; 1.8 V;
|I
CC
| < 30 mA
0.08 0.15 0.22 V/µs
1. V
DD
= 3.3 V, V
DDP
= 5 V, f
XTAL
= 10 MHz, unless otherwise noted. Typical values are at T
A
= 25 °C. (All parameters remain
within limits but are tested only statistically for the temperature range. When a parameter is specified as a function of V
DD
or
V
CC
it means their actual value at the moment of measurement.)
2. To meet these specifications, pin VCC should be decoupled to CGND using two 100 nF ceramic multilayer capacitors of
max. 350 mΩ ESR. If V
CC
slew rate is not critical, the capacitance value can be up to 400 nF. (See Figure 10).
Table 8. Card supply voltage characteristics (continued)
Symbol Parameter
(1)
Test conditions Min. Typ. Max. Unit
Table 9. Crystal connection (pins XTAL1 and XTAL2)
Symbol Parameter
(1)
Test conditions Min. Typ. Max. Unit
C
XTAL1,2
External capacitance
on pins XTAL1,
XTAL2
Depends on type of crystal or resonator used - 15 pF
f
XTAL
Crystal frequency 2 - 26 MHz
f
XTAL1
Frequency applied on
pin XTAL1
0-26MHz
V
IH
High level input
voltage on pin XTAL1
0.7
V
DD
-
V
DD
+0.3
V
V
IL
Low level input
voltage on pin XTAL1
-0.3 -
+0.3
V
DD
V
1. V
DD
= 3.3 V, V
DDP
= 5 V, f
XTAL
= 10 MHz, unless otherwise noted. Typical values are at T
A
= 25 °C.
Table 10. Data lines (pins I/O, I/OUC, AUX1, AUX2, AUX1UC, and AUX2UC)
Symbol Parameter
(1)
Test conditions Min. Typ. Max. Unit
t
D(I/O-I/OUC),
t
D(I/OUC-I/O)
I/O to I/OUC, I/OUC
to I/O falling edge
delay
- - 200 ns
t
PU
Active pull-up pulse
width
- - 100 ns
f
I/O(MAX)
Maximum frequency
on data lines
--1MHz
C
I
Input capacitance on
data lines
- - 10 pF
1. V
DD
= 3.3 V, V
DDP
= 5 V, f
XTAL
= 10 MHz, unless otherwise noted. Typical values are at T
A
= 25 °C.