Datasheet

Electrical characteristics ST1S14
8/46 DocID17977 Rev 2
3 Electrical characteristics
All the population tested at T
J
= 25 °C, V
CC
=12 V, V
EN1
= 0 V, V
EN2
= V
CC
unless otherwise
specified.
The specification is guaranteed from (-40 to +125 °C) T
J
temperature range by design,
characterization, and statistical correlation.
Table 6. Electrical characteristics
Symbol Parameter Test condition Min Typ Max Unit
V
IN
Operating input
voltage range
5.5 48 V
R
DS(on)
MOSFET on
resistance
I
SW
=1 A 0.2 0.4 Ω
I
SW
Maximum limiting
current
3.7 4.5 5.2 A
t
HICCUP
Hiccup time 16 ms
f
SW
Switching frequency 600 850 1000 kHz
Duty cycle
(1)
90 %
T
ON MIN
Minimum conduction
time of the power
element
(1)
90 ns
T
OFF MIN
Minimum conduction
time of the external
diode
(1)
75 90 120 ns
DC characteristics
V
FB
Voltage feedback
I
LOAD
=0 A 1.202 1.22 1.239 V
I
LOAD
=10 mA to 3 A 1.196 1.22 1.245 V
I
FB
FB biasing current 50 nA
I
q
Quiescent current
V
FB
=2 V 1.3 2 mA
V
FB
=2 V, V
IN
=48 V 1.7 2.4 mA
I
qst-by
Standby quiescent
current
Device OFF (see Table 2)1634μA
PG
Power good threshold
V
FB
rising edge
0.92*
V
OUT
V
V
FB
falling edge
0.8*
V
OUT
V
PG output voltage
(open collector active)
I
SINK
=6 mA 0.4 V
Inhibit