Datasheet
Table Of Contents
- Table 1. Device summary
- 1 Application circuit
- 2 Pin configuration
- 3 Maximum ratings
- 4 Electrical characteristics
- 5 Application information
- 5.1 Description
- 5.2 External components selection
- 5.3 Output capacitor (VOUT > 2.5 V)
- 5.4 Output capacitor (0.8 V < VOUT < 2.5 V)
- 5.5 Output voltage selection
- 5.6 Inductor (VOUT > 2.5 V)
- 5.7 Inductor (0.8 V < VOUT < 2.5 V)
- 5.8 Function operation
- 6 Layout considerations
- 7 Diagram
- 8 Typical performance characteristics
- Figure 9. Voltage feedback vs. temperature
- Figure 10. Oscillator frequency vs. temperature
- Figure 11. Max duty cycle vs. temperature
- Figure 12. Inhibit threshold vs. temperature
- Figure 13. Reference line regulation vs. temperature
- Figure 14. Reference load regulation vs. temperature
- Figure 15. ON mode quiescent current vs. temperature
- Figure 16. Shutdown mode quiescent current vs. temperature
- Figure 17. PMOS ON resistance vs. temperature
- Figure 18. NMOS ON resistance vs. temperature
- Figure 19. Efficiency vs. temperature
- Figure 20. Efficiency vs. output current@Vout = 5 V
- Figure 21. Efficiency vs. output current@Vout = 3.3 V
- Figure 22. Efficiency vs. output current@Vout = 12 V
- 9 Package mechanical data
- Table 6. Power SO-8 (exposed pad) mechanical data
- Figure 23. Power SO-8 (exposed pad) dimensions
- Figure 24. Power SO-8 (exposed pad) recommended footprint
- Table 7. Power SO-8 (exposed pad) tape and reel mechanical data
- Figure 25. Power SO-8 (exposed pad) tape and reel dimensions
- Table 8. DFN8 (4X4) mechanical data
- Figure 26. DFN8 (4x4) dimensions
- Table 9. DFN8 (4x4)tape and reel mechanical data
- Figure 27. DFN8 (4x4)tape and reel dimensions
- 10 Revision history

Electrical characteristics ST1S10
8/29 Doc ID 13844 Rev 5
4 Electrical characteristics
V
IN
= V
IN_SW
= V
IN_A
= V
INH
= 12 V, V
SYNC
= GND, V
OUT
= 5 V, I
OUT
= 10 mA, C
IN
= 4.7 µF
+0.1 µF, C
OUT
= 22 µF, L1 = 3.3 µH, T
J
= -40 to 125°C (Unless otherwise specified, refer to
the typical application circuit. Typical values assume T
J
= 25°C).
Table 5. Electrical characteristics
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
FB
Feedback voltage
T
J
= 25°C 784 800 816 mV
T
J
= -25°C to 125°C 776 800 824 mV
I
FB
V
FB
pin bias current 600 nA
I
Q
Quiescent current
V
INH
> 1.2 V, not switching 1.5 2.5 mA
V
INH
< 0.4 V 2 6 µA
I
OUT
Output current
(1)
V
IN
= 2.5 V to 18 V V
OUT
=
0.8 V to 13.6 V
(2)
3.0 A
V
INH
Inhibit threshold
Device ON 1.2 V
Device OFF 0.4 V
I
INH
Inhibit pin current 2 µA
%V
OUT
/∆V
IN
Reference line regulation 2.5 V < V
IN
< 18 V 0.4
%V
OUT
/
∆V
IN
%V
OUT
/
∆I
OUT
Reference load regulation 10 mA < I
OUT
< 3 A 0.5
%V
OUT
/
∆I
OUT
PWM fs PWM switching frequency
V
FB
= 0.7 V, Sync = GND T
J
= 25°C
0.7 0.9 1.1 MHz
D
MAX
Maximum duty cycle
(2)
85 90 %
R
DSon
-N NMOS switch on resistance I
SW
= 750 mA 0.10 Ω
R
DSon
-P PMOS switch on resistance I
SW
= 750 mA 0.12 Ω
I
SWL
Switch current limitation 5.0 A
ν Efficiency
I
OUT
= 100 mA to 300 mA 85 %
I
OUT
= 300 mA to 3 A 90 %
T
SHDN
Thermal shut down 150 °C
T
HYS
Thermal shut down hysteresis 15 °C
V
OUT
/∆I
OUT
Output transient response
100 mA < I
OUT
< 1 A, t
R
= t
F
≥ 500 ns
±5%V
O
V
OUT
/∆I
OUT
@I
O
=short
Short circuit removal response
(overshot)
10 mA < I
OUT
< short ±10 %V
O
F
SYNC
SYNC frequency capture range
V
IN
= 2.5 V to 18 V, V
SYNC
=
0 to 5 V
0.4 1.2 MHz
SYNC
WD
SYNC pulse width V
IN
= 2.5 V to 18 V 250 ns
V
IL_SYNC
SYNC input threshold low V
IN
= 2.5 V to 18 V 0.4 V